A Study of the Single-Frequency Quenched-Domain Mode Gunn-Effect Oscillator

Khandelwal, D.D.; Curtice, W.R.

doi:10.1109/tmtt.1970.1127187

Cited by 20 publications

(2 citation statements)

References 17 publications

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“…This happens because at low T , when phonon scattering is reduced, the high field region arising near the anode is enough for the onset of the domain formation, even if the starting point is not always located at the same position, thus originating quite a broad frequency spectrum of generated power. This explanation is coherent with the fact that the amplitude of the GOs within the LTB is much lower than that found in the classic DDB, and also the NDR observed in the I-V curves is much lower in the temperature range where only the LTB appears (below 75 K), features which are common with the circuit quenched-domain mode of standard GDs [12] where also the complete nucleation of the domains is not reached. Indeed, the LTB does not manifest so clearly for longer diodes, probably due to the fact that Gunn domains have more space to develop completely.…”

Section: Measurements: DC and Rf Resultssupporting

confidence: 78%

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

López

Paz-Martínez

Sánchez-Martín

et al. 2021

IEEE Electron Device Lett.

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Planar Gunn diodes on In 0.53 Ga 0.47 As with lengths between 2 and 5 µm have been fabricated and characterized in a temperature range of 10 to 300 K. Two different oscillation regimes are observed depending on temperature. At the higher values, the frequency of the oscillations decreases as the bias increases, as expected for a well-established transit-time domain mode. But below approximately 75 K, the behavior is the opposite, the frequency of the Gunn oscillations increases with the bias. This fact, together with a much lower amplitude of the oscillations, indicate the possible switch to a different oscillation mode in which the domains are not able to attain their complete maturation before reaching the anode.

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Section: Measurements: DC and Rf Resultssupporting

confidence: 78%

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

López

Paz-Martínez

Sánchez-Martín

et al. 2021

IEEE Electron Device Lett.

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“…voltage amplitude is of importance. Khandelwal and Curtice (1970) determined the negative conductance (g,]) values in quenched domain mode, Gunn oscillators but only a t comparatively higher r.f. voltages.…”

Section: Introductionmentioning

confidence: 99%

Negative conductance measurements of Gunn devices in the X-band frequency range

Mathur

Dhall

Lomash

et al. 1976

International Journal of Electronics

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The negative conductance of X-band GaAs Gunn diodes, as a function of microwave voltane amolitude across the diodes. has been studied under different circuit conditions -. and bias voltages giving rise to a frequency variation from 8.2 to 13.1 GHz. Negative conductance has been found to increase near the transit-time frequency (f x lo+') and falls off rapidly at higher as well as lower frequencies. Also the device D l 5 shows a peculiar behaviour in that its build-up time is very small when oscillating at frequencies higher than transit time frequency. A frequency shift has been observed with the variation of diode position in the cavity.

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Effects of the operational modes on the temperature dependence of the Gunn diode admittance

Makino

1979

Solid-State Electronics

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A Study of the Single-Frequency Quenched-Domain Mode Gunn-Effect Oscillator

Cited by 20 publications

References 17 publications

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

Negative conductance measurements of Gunn devices in the X-band frequency range

Effects of the operational modes on the temperature dependence of the Gunn diode admittance

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