A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

Abstract

Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia by plasma-enhanced chemical vapor deposition (PECVD) followed by a procedure for tetra-ethoxyl silane (TEOS) oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs) showed that 3MS α-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH3 stretch mode in the α-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O) substituted TEOS oxide capped on 4MS α-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination.

Selective Ru ALD as a Catalyst for Sub-Seven-Nanometer Bottom-Up Metal Interconnects

“…The ATR spectra point to a reduction in the intensity associated with the Si–N and Si–C vibrations at 890 and 820 cm –1 consequently on the SiCN surface, − which can be attributed to a reduction of the C and N content induced by the plasma, in agreement with the XPS spectra shown in Figure b–d and to O–H and Si–O groups formation after the plasma treatment followed by the atmospheric exposure.…”

Hard silicon carbonitride thin‐film coatings by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 2: Physical, optical, and mechanical properties of deposited films

“…Figure 2a presents the refractive index ( n ) of a‐SiCN films deposited from DMADMS, TDMAS, TMDSN, and BDMAMS precursors as a function of substrate temperature ( T S ) and shows that n increases markedly with increasing T S reaching for BDMAMS films at T S = 350–400°C with very high values of n = 2.01–2.02. The trends observed for n curves in Figure 2a are due to thermally induced crosslinking reactions resulting in the formation of the Si−C and Si−N networks, [ 32 ] which cause densification of the film and the resulting increase of the refractive index. This is evidently proved by the relationships between the refractive index and density exemplified in Figure 2b for DMADMS and BSCDSM films.…”

“…[ 31 ] In view of these unique features, SiCN films are very promising coatings for advanced technology. For example, they may be used as wear‐resistant tribological coatings for steel surface, [ 17‐19 ] diffusion barrier coatings for copper, [ 32 ] separation membranes for a small molecule gas, [ 33 ] or components for optical interference filters with a gradient of refractive index. [ 34 ]…”

Thermal properties of some organosilicon precursors for chemical vapor deposition

“…Products of their polymerization-polysilanes and polysiloxanes-that contain Si-Si or Si-O-Si fragments possess a number of practically attractive chemical and physical properties [1][2][3][4][5]. Volatile organosilicon compounds are also famous as CVD (chemical vapor deposition) precursors for the production of silicon-containing films and ceramics [6][7][8][9][10]. SiC:H and SiCN:H films are perspective as low-k dielectrics and Cu diffusion barriers.…”