A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition

Шибалов, М.В.; Porokhov, N. V.; Mumlyakov, Alexander; Trofimov, I. V.; Dyud’bin, G. D.; Timofeeva, E. R.; Tagachenkov, A. M.; Anufriev, Yu.V.; Zenova, E. V.; Tarkhov, M. A.

doi:10.1134/s1063784221040174

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…The optimal ratio of H 2 /Ar reactant equal to 0.5 which allows achieving the minimum resistivity was defined in the study [19]. However, the influence of the exposure duration of the H 2 /Ar reactant plasma on the film characteristics was not investigated.…”

Section: Methodsmentioning

confidence: 99%

Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Шибалов¹,

Mumlyakov²,

Trofimov³

et al. 2021

Supercond. Sci. Technol.

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This study presents a multistep process of plasma-enhanced atomic layer deposition of ultrathin superconductive films of niobium nitride from metal organic precursor tris(diethylamido)(tert-butylimido)niobium(V). While using NH3/Ar and H2/Ar gas mixtures as reactants, a comprehensive analysis was performed pertaining to the influence of operating parameters, such as the duration of plasma exposure to the H2/Ar reactant, gas-flow ratio, plasma exposure duration and power of inductively coupled plasma source for the NH3/Ar reactant, on the obtained films’ parameters, such as resistivity, superconducting transition temperature and critical current density. Amorphous silicon oxide was used as the substrate. It was shown by experiments, that films’ resistivity affects the value of critical current density. As a result, the all-time record resistivity of 147 µΩ·cm was achieved for films with a thickness of 8 nm. When cooling in the Gifford McMahon closed-cycle cryostat, the values of superconducting transition temperature and critical current density were equal to 12.3 К and 9 МА/cm2 at a liquid helium temperature, respectively.

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Section: Methodsmentioning

confidence: 99%

Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Шибалов¹,

Mumlyakov²,

Trofimov³

et al. 2021

Supercond. Sci. Technol.

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“…Niobium nitride is widely adopted in the manufacturing of superconducting nanoelectronic devices of various functionalities, such as single-photon detectors SNSPD [1][2], hot-electron bolometers (HEB) and mixers of THz frequency range [3], microwave kinetic inductance detectors (MKIDs) [4], etc. Thin NbN films are produced using various techniques, such as reactive magnetron sputtering with Nb target in Ar and N 2 [5] gas mixture, pulsed laser deposition (PLD) [6], high-temperature chemical vapor deposition (HTCVD), and atomic layer deposition (ALD) [7] [8]. Generally, to ensure high operating parameters, all mentioned techniques require intensive heating of a substrate up to 600°C and more.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Porokhov¹,

Sirotina²,

Першина³

et al. 2021

Supercond. Sci. Technol.

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The influence of the buffer layer of hafnia dielectric (HfO 2 ) on superconducting properties of niobium nitride films (NbN), produced by the technique of the reactive magnetron depositing has been investigated for the first time. This study presents a comprehensive analysis of morphological, microstructural, and electrophysical parameters of thin NbN films. The dependence of transition critical temperature from the thickness of the HfO 2 buffer layer has been obtained. For the first time, it has been demonstrated that the superconducting properties of niobium nitride films at the HfO 2 buffer layer have high superconductive parameters, namely, Т c ~ 13 K (at the film thickness of approximately 30 nm) and high critical current density of approximately 10 7 A/cm 2 . The relation between the thickness of the HfO 2 buffer layer with the critical current density of niobium nitride films has been determined. It appeared that the values of critical current density increase significantly up to 13 MA/cm 2 when the thickness of the hafnia buffer layer is more than 2 nm.

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Ultrathin epitaxial NbNx film deposited by PEALD method on C-plane sapphire: Growth, structure and superconducting properties

Шибалов¹,

Sirotina²,

Першина³

et al. 2023

Applied Surface Science

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A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition

Cited by 4 publications

References 29 publications

Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Ultrathin epitaxial NbNx film deposited by PEALD method on C-plane sapphire: Growth, structure and superconducting properties

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A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition

Cited by 4 publications

References 29 publications

Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO2 buffer layer

Ultrathin epitaxial NbNx film deposited by PEALD method on C-plane sapphire: Growth, structure and superconducting properties

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Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer