Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Шибалов, М.В.; Mumlyakov, Alexander; Trofimov, I. V.; Timofeeva, E. R.; Sirotina, Anna P.; Першина, Е.А.; Tagachenkov, A. M.; Anufriev, Yuri; Zenova, E. V.; Porokhov, Nikolay Nick; Tarkhov, M. A.

doi:10.1088/1361-6668/ac0d09

Cited by 8 publications

(2 citation statements)

References 30 publications

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“…The fabrication of the niobium nitride film was achieved through the employment of plasma-enhanced atomic layer deposition. The deposition process is described in detail in our previous work [24]. The number of deposition cycles was 93.…”

Section: Fabricationmentioning

confidence: 99%

Superconducting single-photon detector integrated in DBR with optical microconnector for MM or SM fiber

Shibalov,

Asharchuk,

Epifanov

et al. 2024

Supercond. Sci. Technol.

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This paper presents the development of a superconducting nanowire single-photon detector (SNSPD) integrated into a distributed Bragg reflector (DBR) with a design center wavelength of 830 nm and a width of 200 nm. This SNSPD is made of a superconducting niobium nitride (NbN) thin film that is produced using plasma-enhanced atomic layer deposition (PEALD). The DBR is made of 15 alternating layers of silicon nitride and silicon oxide that are produced through plasma-enhanced chemical vapor deposition (PECVD). The reflection efficiency of the mirror is 90% at a wavelength of 830 nm. For sufficient optical coupling, an optical micro-connector optimized for multimode or single-mode optical fibers with a diameter of 128 μm was formed using two-photon polymerization techniques. The niobium nitride film was deposited onto the DBR surface in-situ in two separate reactors connected by a vacuum transfer. The in-situ technique of deposition of a superconducting niobium nitride film and a distributed Bragg reflector has allowed achieving a detection efficiency of 90% at a wavelength of 830 nm and a dark count rate of 10 s-1 at a temperature of 2.5 K. Additionally, the detector jitter was 50 ps.

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Section: Fabricationmentioning

confidence: 99%

Superconducting single-photon detector integrated in DBR with optical microconnector for MM or SM fiber

Shibalov,

Asharchuk,

Epifanov

et al. 2024

Supercond. Sci. Technol.

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“…Thin NbN films are produced using various techniques, such as reactive magnetron sputtering with Nb target in Ar and N 2 [5] gas mixture, pulsed laser deposition [6], high-temperature chemical vapor deposition and atomic layer deposition (ALD) * Author to whom any correspondence should be addressed. [7,8]. Generally, to ensure high operating parameters, all these mentioned techniques require intensive heating of a substrate up to 600 • C and more.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Porokhov¹,

Sirotina²,

Першина³

et al. 2021

Supercond. Sci. Technol.

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The influence of the buffer layer of hafnia dielectric (HfO 2 ) on superconducting properties of niobium nitride films (NbN), produced by the technique of the reactive magnetron depositing has been investigated for the first time. This study presents a comprehensive analysis of morphological, microstructural, and electrophysical parameters of thin NbN films. The dependence of transition critical temperature from the thickness of the HfO 2 buffer layer has been obtained. For the first time, it has been demonstrated that the superconducting properties of niobium nitride films at the HfO 2 buffer layer have high superconductive parameters, namely, Т c ~ 13 K (at the film thickness of approximately 30 nm) and high critical current density of approximately 10 7 A/cm 2 . The relation between the thickness of the HfO 2 buffer layer with the critical current density of niobium nitride films has been determined. It appeared that the values of critical current density increase significantly up to 13 MA/cm 2 when the thickness of the hafnia buffer layer is more than 2 nm.

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Study of Niobium Mononitride Thin Films Grown Using High Power Impulse Magnetron Sputtering

Kalal

Kumar

Karmakar

et al. 2021

Physica Rapid Research Ltrs

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Niobium mononitride (NbN) has gained considerable attention because of its superconducting and refectory properties making it a promising material in devices like spin filters, Josephson junctions, superconducting qubits, and transistors especially when combined with other semiconductors and/or magnetic materials. [1][2][3][4][5][6][7] The ease of formation along with a relatively higher superconducting transition temperature (T C > 10 K) and a lower superconducting energy gap (Δ(0) % 3 meV) has made NbN to be one of the most studied superconducting materials for a wide range of applications. [8] Additionally, it has been widely used as an oxidation, wear-resistant layer, and diffusion barrier in protective and hard coatings. [9,10] NbN thin films can be synthesized using different growth techniques such as chemical vapor deposition, [11] ion beam-assisted deposition, [12] reactive direct current magnetron sputtering (dcMS), molecular beam epitaxy, [1] atomic layer deposition, [13] pulsed laser deposition, [14] etc.Among these, the dcMS has been widely used to grow thin films due to its cost effectiveness and the ability to grow uniform thin films. In a typical dcMS process, the plasma is mostly dominated by neutrals and the fraction of ionized species is very small (typically less than 5%). [15] The structural properties of the sputtered films strongly depend on the kinetic energies and ionization state of the impinging atomic and molecular species on the surface of growing films. It is well-known that the low ionization in dcMS process results into a porous and loosely packed microstructure and forms a large density of defects in the grown films. [16,17] To overcome these issues high power impulse magnetron sputtering (HiPIMS) has been developed. [18,19] In the HiPIMS technique, high power pulses are applied to a sputtering target contrary to a constant DC voltage in the dcMS. The use of high power pulses onto the sputtering target results in a large fraction of ionized-sputtered species. In addition, gases that are present in the vicinity of target also get ionized. [20] Earlier experimental and theoretical reports suggest that high ion to neutral ratios during HiPIMS process results into better thin-films' qualities in terms of denser microstructure, smoother surface, and interfaces. [21][22][23] Recent experimental and theoretical results [24,25] suggest that Nb vacancies are the most dominant

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Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Cited by 8 publications

References 30 publications

Superconducting single-photon detector integrated in DBR with optical microconnector for MM or SM fiber

Superconducting single-photon detector integrated in DBR with optical microconnector for MM or SM fiber

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Study of Niobium Mononitride Thin Films Grown Using High Power Impulse Magnetron Sputtering

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Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate

Cited by 8 publications

References 30 publications

Superconducting single-photon detector integrated in DBR with optical microconnector for MM or SM fiber

Superconducting single-photon detector integrated in DBR with optical microconnector for MM or SM fiber

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO2 buffer layer

Study of Niobium Mononitride Thin Films Grown Using High Power Impulse Magnetron Sputtering

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Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer