A study of variable range hopping conduction of a sol-gel ZnSnO thin film transistor using low temperature measurements

Hsu, Chih-Chieh; Chou, Cheng-Han; Jhang, Wun-Ciang; Chen, Po-Tsung

doi:10.1016/j.physb.2019.05.036

Cited by 8 publications

(5 citation statements)

References 61 publications

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“…This finding reveals that the deposited Al electrode has good contact with the ZTO film. 20,28 The Al x O y interfacial layer can prevent the spreading of Al from the Al electrode to the Z/S/Z layer. Moreover, the formation of Al x O y may cause an increase in the oxygen-vacancy content in the upper ZTO layer.…”

Section: Resultsmentioning

confidence: 99%

“…An increased electron concentration near the contact regions is helpful for preventing current crowding. 28,68,69 The current crowding effect indicates that the transistor current in the linear region, low drain bias region, is insensitive to the applied gate bias. In I DS – V DS output characteristics, the phenomenon that I DS – V DS curves crowd together will be observed.…”

Section: Resultsmentioning

confidence: 99%

“…μ is 1.12 cm 2 V −1 s −1 , SS is 0.39 V dec −1 and I on / I off is ∼10 7 . 27,28 In the literature, Zhang et al used a solution process to fabricate a ZTO:N TFT. Incorporation of nitrogen is used to decrease the oxygen-vacancy density as well as electron concentration of the ZTO channel layer.…”

Section: Introductionmentioning

confidence: 99%

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Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

et al. 2023

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

et al. 2023

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“…Complex impedance spectroscopy is a powerful technique that utilizes an alternating current (AC) signal with small amplitude, to analyze the impedance characteristics of bentonite type semiconducting materials. Theoretical models of conduction due to tunneling and hopping have been proposed to explain the frequency dependence of AC electrical conductivity [18][19][20][21][22][23][24]. The grain boundaries, considered as defects, tend to decrease the electrical conductivity of the system [25].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterisation and analysis of dominant contributions in disordered semiconducting systems with an application to the pure bentonite material for civil engineering applications

et al. 2022

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Semiconductors and clay materials have significant applications in environmental, civil engineering and optoelectronic sectors. The application of an electric field to such systems is subject of many works. However, to understand the behaviour of such materials under the influence of an electric field, the perception of its electrical properties is essential. In the present study, the powerful technique of complex impedance spectroscopy (CIS) is introduced to illustrate the electrical characteristics of two types of disordered semiconducting materials. These are Cu5In9Se16, an ordered defect compound of the I-III-VI2 family and a novel bentonite clay system which is an insulator at room temperature and semiconductor above 400 °C. Na-bentonite has been studied extensively because of its strong adsorption capacity and complexation ability while Cu5In9Se16 is considered for its use in solar and phtovoltaique domain. Some of selenides have turned out to be leading materials for electro-optical devices and the tellurides for thermoelectric power generation. It is very likely that study of bentonite clay and other similar materials may lead to the technology of heterojunction and clay composite. The frequency dependence of conductivity of bentonite was investigated using an impedance analyzer in the frequency range (20 Hz–1 MHz). The experimental data of CIS are analyzed using some analytical methods that take into account the effect of the grains and grain boundaries. The impedance data confirm the non-Debye behavior in these systems. Some important parameters related to the identified dominant contribution such as relaxation time and activation energies are estimated for the studied materials in the considered temperature and frequency ranges

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“…Most AOSs are deposited by radio-frequency magnetron sputtering using ceramic targets [14,15,30] but magnetron sputtering requires a complicated vacuum system so manufacturing costs are greater [31]. A sol-gel method is a lowcost synthesis technique and allows easy adjustment of stoichiometry [17,18,32]. Solution-processed AOSs offer many benefits but inferior device performance is an obstacle to practical applications.…”

Section: Introductionmentioning

confidence: 99%

Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors

Lin

Huang

Lou

et al. 2021

J. Phys. D: Appl. Phys.

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The electrical performance of thin-film transistors that use an amorphous oxide semiconductor (AOS) is significantly improved by incorporating metal cations as carrier suppressors. However, the effect of these elements on the performance of AOS-based photodetectors (PDs) is still unknown. This study uses a precursor containing lithium (Li) element and a sol-gel process to produce a Li-doped amorphous ZnSnO (a-ZTO) thin-film for UV PD applications. The results of x-ray photoelectron spectroscopy analysis show that the number of oxygen vacancies (V o) in a-ZTO thin-films decreases significantly from ∼32.1% to ∼14.4% after Li-doping (3 at%). The dark current decreases and the photocurrent increases in the ZTO-based PD so an ultra-high photo-to-dark current ratio (PDCR) of 1185 is achieved. The significant increase in PDCR means that solution-processed a-ZTO are eminently suited to use in UV PDs that use In-free AOSs.

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A study of variable range hopping conduction of a sol-gel ZnSnO thin film transistor using low temperature measurements

Cited by 8 publications

References 61 publications

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Electrical characterisation and analysis of dominant contributions in disordered semiconducting systems with an application to the pure bentonite material for civil engineering applications

Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors

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A study of variable range hopping conduction of a sol-gel ZnSnO thin film transistor using low temperature measurements

Cited by 8 publications

References 61 publications

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

Electrical characterisation and analysis of dominant contributions in disordered semiconducting systems with an application to the pure bentonite material for civil engineering applications

Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors

Contact Info

Product

Resources

About

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer