A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Min, Tai; Chen, Qiang; Beach, R. S.; Jan, Guenole; Horng, C.; Kula, Witold; Torng, Terry; Tong, R.; Zhong, Tom; Tang, D.D.; Wang, Pokang; Chen, Mao-min; Sun, J. Z.; DeBrosse, J.; Worledge, D. C.; Maffitt, T.; Gallagher, W. J.

doi:10.1109/tmag.2010.2043069

Cited by 120 publications

(57 citation statements)

References 22 publications

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“…The lifetime for MTJ with 0.85 nm thick barrier can be estimated to 10 8.4988 s (10 years) for a typical operating voltage of 400 mV. This result is consistent with the value referred in[30].…”

supporting

confidence: 90%

Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses

Wang

Zhang

Deng

et al. 2014

Microelectronics Reliability

112

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supporting

confidence: 90%

Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses

Wang

Zhang

Deng

et al. 2014

Microelectronics Reliability

112

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“…5 and 6)), we conclude that there is essentially no current-induced heating of the MTJ at the voltages of 0.6 V that are needed for the manipulation of the FL magnetization by STT. This conclusion is important in the sense that it proves that it is legitimate to assume a device temperature of about 300K when applying the conventional methods of analysis of the distributions of STT switching currents and switching fields, as performed in many instances when analyzing the thermal stability in STT-MRAM applications 3,16 .…”

Section: Discussionmentioning

confidence: 99%

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

Goff

Nikitin²,

Devolder

2016

Journal of Applied Physics

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We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm 2 nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K and we can exclude any substantial heating at the spin-torque switching voltage.

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“…The additional functionality provided by magnetic electrodes enabled a current-driven resistance modulation due to spin-transfer torque. [7] We showed that a phenomenon known as back-hopping [8][9][10][11] leads to repeated switching between two resistance levels accompanied by current spiking, which emulates neuronal behavior. As a result, this remarkably simple system, which is composed of two magnetic layers separated by an insulator, provides a sufficient basis for the fabrication of a complete neural network.…”

Section: Doi: 101002/adma201103723mentioning

confidence: 99%

“…To verify the neuron-like behavior of memristive MTJs, we present measurements to show that the alignment of magnetic electrodes is modified by the application of high current densities (STT). In combination with back-hopping, [8][9][10][11] current spikes were observed, demonstrating that memristive MTJs can, in principle, emulate neurons as well. A repeated application of stimuli led to a stepwise resistance change.…”

Section: Doi: 101002/adma201103723mentioning

confidence: 99%

“…Figure 1A illustrates the resistance change induced by a stimulus of N pulses enveloped by v(t) = v max sin(πt/(Nτ)), with τ denoting the We next turned our attention from synapses to neurons and from the barrier properties to the magnetic electrodes of the MTJs. With a new perspective on a phenomenon known as back-hopping, [8][9][10][11] we were able to demonstrate that memristive MTJs can emulate the behavior of neurons. Figure 4 shows an STT measurement, where the free magnetic electrode was switched by a spin-polarized current.…”

Section: Doi: 101002/adma201103723mentioning

confidence: 99%

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