The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse‐Neuron System

Krzysteczko, Patryk; Münchenberger, Jana; Schäfers, Markus; Reiss, Günter; Thomas, Andy

doi:10.1002/adma.201103723

Cited by 198 publications

(158 citation statements)

References 35 publications

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“…However, without knowing of precisely which defect species is responsible for altering magnetotransport in a given MTJ, it is difficult to understand, let alone control, the impact of defects on magnetotransport. This immature state-of-the-art is all the more surprising considering that defects within MgO-based MTJs may be magnetic [29][30][31] , and are thought to underscore advanced device functionalities such as memristive effects 22,32,33 , which may be likened to the operation of a synapse-neuron pathway 34 .…”

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confidence: 99%

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

et al. 2014

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Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

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confidence: 99%

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

et al. 2014

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“…The key is to find a means to translate the relative spike timing into a specific voltage (current) waveform that controls the flux or charge through the memristors, which directly controls the memristor conductance change. Triangular waves, complementary square waves, pulses with exponentially decreasing tails, or other asymmetric waveforms are common examples of the proposed neuronal inputs which could either be realized through test programs or hardware circuits [6,45,47,[56][57][58][59]. In all of these attempts, the relative timing between the signals from the post-synaptic neuron and that of the pre-synaptic neuron determines how the signals overlap at the memristor junction, which in turn tunes the memristor conductance accordingly.…”

Section: Spike-timing-dependent Plasticitymentioning

confidence: 99%

Memristive Devices: Switching Effects, Modeling, and Applications

Yang

Chang

Lü

2013

Memristors and Memristive Systems

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“…11,14,15 Magnetic tunnel junctions have been proposed as memristors by controlling the magnetization direction in ferromagnetic electrodes through a spin-transfer torque effect. 16 Recently, memristive behaviors have also been observed in phasechange memories owing to the metal-insulator phase transition in VO 2 thin films and nanowires. 17,18 As a new type of memristors, FTJs have shown promising potential to emulate the functionality of synapses, for example, the spike-timing-dependent plasticity, in which the junction resistance can be regarded as the synaptic weight.…”

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confidence: 99%

Memristive behaviors in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions

Wen

2014

Applied Physics Letters

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We demonstrate memristive behaviors in Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor ferroelectric tunnel junctions, in which the semiconductor electrode can be switched between the accumulated and the depleted states by polarization reversal in the BaTiO3 barrier via the ferroelectric field effect. An extra barrier, against electron tunneling, forms in the depleted region of the Nb:SrTiO3 electrode surface, which together with the ferroelectric barrier itself modulate the tunneling resistance with the change of effective polarization. Continuous resistance modulation over four orders of magnitude is hence achieved by application of programmed voltage pulses with different polarity, amplitude, and repetition numbers, as a result of the development of the extra barrier.

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The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse‐Neuron System

Cited by 198 publications

References 35 publications

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

Memristive Devices: Switching Effects, Modeling, and Applications

Memristive behaviors in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions

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