Memristive Devices: Switching Effects, Modeling, and Applications

Yang, Yuchao; Chang, Ting Chang; Lü, Wei

doi:10.1007/978-1-4614-9068-5_6

Cited by 4 publications

(3 citation statements)

References 70 publications

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“…For WO x -based memristor, Lu's group has developed the devices with excellent performance and demonstrated its application on artificial synapse. [49][50][51] They usually ascribed the switching mechanism to the change of effect area of "conducting filaments." Different from their device structure, the Pt was selected as the top electrode in current work, which leads to the existence of Schottky barrier on the Pt/WO x surface.…”

Section: Resultsmentioning

confidence: 99%

“…As shown in Figure a,b, its conductance can continuously increase (decrease) with the positive (negative) voltage sweeps, which can be regarded as the synaptic potentiation (depression) process when treating the device conductance as the synapse weight. For WO x ‐based memristor, Lu's group has developed the devices with excellent performance and demonstrated its application on artificial synapse . They usually ascribed the switching mechanism to the change of effect area of “conducting filaments.” Different from their device structure, the Pt was selected as the top electrode in current work, which leads to the existence of Schottky barrier on the Pt/WO x surface.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Transferable and Flexible Artificial Memristive Synapse Based on WO_x Schottky Junction on Arbitrary Substrates

Lin

Zeng

et al. 2018

Adv Elect Materials

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features beyond mechanical flexibility such as wearability, stretchability, portability, and biocompatibility. For instance, Chen's group successfully demonstrated stretchable motion memory devices based on mechanical hybrid materials, which can work in the wearable state. [25] In order to achieve those properties, the nonconventional substrates are usually necessary to integrate with the devices, such as flexible organics, biocompatible polymer, and nonplanar substrates. However, these substrates may possess poor tolerance for high temperature during the device fabrication. In general, there exist two approaches to obtain functional devices on the arbitrary nonconventional substrates. On the one hand, as the reviewer mentioned, the flexible organic devices can be directly fabricated on these desired substrates due to the low-temperature processing of organic materials. [26][27][28][29] On the other hand, fabrication of transferable or free-standing devices is a more universal method for the integration with nonconventional substrates, which is applicable not only to organic materials but also to inorganic materials. [30][31][32][33] As a matter of fact, fabrication of inorganic devices on nonconventional substrates is usually faced with some difficulties. For example, the thermal processing, which is necessary in some cases to obtain high-quality films, may limit the use of organic and biocompatible polymer substrates; the shadow effect of physical deposition (e.g., sputtering or pulsed laser deposition), which is usually employed to deposit inorganic films, can result in the film nonuniformity when they are fabricated on nonplanar substrates. Thus, the development of transferable and free-standing electronic devices can well protect the functional substrates from harsh processing, and also, the transferable devices can be stuck conformally onto the desired substrates (like 3D-curve or folded) to realize future applications on wearable computers, epidermal electronics, and implantable chips. For example, Wan et al. have successfully demonstrated free-standing artificial synapses using 3D protoncoupled transistors on chitosan membranes. [33] Recently, two-terminal memristors have been proposed as one promising candidate for the artificial synapses thanks to its variable conductance in analogy with the change of synapse weight. [34][35][36][37][38] A variety of materials, such as metal oxides, [34][35][36] chalcogenide, [37] Si, [38] Perovskite, [39,40] and organics, [41] have been employed as building blocks of memristor-based artificial synapses. Diverse synaptic functions atThe absence of an effective approach to achieve free-standing inorganic memristors seriously hinders the development of transferable artificial synapses. Here, a transferable WO x -based memristive synapse is demonstrated using a nondestructive water-dissolution method in which the NaCl substrate is selected as the sacrificial layer due to its thermotolerance and water-solubility. The essential synaptic learning functions are achieved to com...

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Transferable and Flexible Artificial Memristive Synapse Based on WO_x Schottky Junction on Arbitrary Substrates

Lin

Zeng

et al. 2018

Adv Elect Materials

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show abstract

“…These and other applications have initiated a rush for inventing various memristive devices, with several memristor classes being already identified. For instance, there are CMOS-compatible memristors based on (i) resistive switching memories in oxides such as TiO 2 and WO 3 , (ii) electrochemical metallization (redox memristors), and (iii) phase change materials [4,5]. The memristive behavior is encountered in many materials, in which different physical effects are present.…”

Section: Introductionmentioning

confidence: 99%

Memristive GaN ultrathin suspended membrane array

et al. 2016

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We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 184 m 2 , act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep.

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Adaptive sparse coding based on memristive neural network with applications

Zhou

Dong

et al. 2019

Cogn Neurodyn

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Memristive Devices: Switching Effects, Modeling, and Applications

Cited by 4 publications

References 70 publications

Transferable and Flexible Artificial Memristive Synapse Based on WO_x Schottky Junction on Arbitrary Substrates

Transferable and Flexible Artificial Memristive Synapse Based on WO_x Schottky Junction on Arbitrary Substrates

Memristive GaN ultrathin suspended membrane array

Adaptive sparse coding based on memristive neural network with applications

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Memristive Devices: Switching Effects, Modeling, and Applications

Cited by 4 publications

References 70 publications

Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates

Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates

Memristive GaN ultrathin suspended membrane array

Adaptive sparse coding based on memristive neural network with applications

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Transferable and Flexible Artificial Memristive Synapse Based on WO_x Schottky Junction on Arbitrary Substrates

Transferable and Flexible Artificial Memristive Synapse Based on WO_x Schottky Junction on Arbitrary Substrates