Memristive GaN ultrathin suspended membrane array

Abstract

We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 184 m 2 , act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep.

Wrinkled‐Surface‐Induced Memristive Behavior of MoS2 Wrapped GaN Nanowires

“…[17,18] Interestingly, the memristive behavior was achieved from micro-scale GaN prepared by surface engineering. [18,19] However, most of the memristors with the 1D structure tend to have weak cyclic characteristics or high switching voltages. In these devices, the memristive behavior is observed to have lengths on the order of microns and the random migration path and long-distance migration of ions or vacancies in/on the 1D materials may limit the memristive performance.…”

Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography

“…In this paper, we demonstrate the fabrication of nanoperforated ultrathin β-Ga 2 O 3 membranes using a cost-effective technological route consisting of two steps. In the first step, the Surface Charge Lithography (SCL) is applied to fabricate GaN nanomembranes as described previously [33][34][35]. In the second step, the GaN nanomembranes are transformed into crystalline β-Ga 2 O 3 under conditions of thermal treatment in air at 900 • C. The transformation from hexagonal GaN to β-Ga 2 O 3 phase is demonstrated by investigation of the samples using TEM, AFM, Raman and XPS.…”

Memristive Properties of GaN HEMTs Containing Deep‐Level Traps

“…The known nitride memristivity properties has been suggested already to power electronic devices based in GaN as discussed in Refs. .…”