A study on aberrations in energy band gap of quantum confined gallium arsenide spherical nanoparticles

Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

“…Semiconductors, fabricated at the nanoscale, demonstrate a drastic change in optical and electron properties [5]. These changes are due, above all, to quantum-dimensional effects, associated with the quantization of charge carriers' energy, the motion of which is restricted, in one, two or three directions [6,7].…”

Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

“…The modified DPF device with suitable modification has been used worldwide for the fabrication of nanoparticles and nanostructures of different materials [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. In most of these studies, the modification of anode is almost similar but the arrangement for placing the substrate varies.…”

“…The modified DPF device has been established as a promising tool for nanofabrication by the plasma research group at the University of Delhi [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. In particular, several nanostructures of metals [ 8 , 9 , 10 , 11 , 12 , 13 ], semiconductors [ 14 , 15 , 16 , 17 , 18 ] and insulators [ 19 , 20 , 21 ] have been produced using the modified DPF device. Apart from this the nanostructures of materials, such as TiC [ 3 ], hydroxyapatite (HA) [ 4 ], Al/a-C [ 5 ], WN 2 [ 6 ], etc.…”

“…The III–V semiconductor nanostructures of materials like gallium nitride (GaN) and gallium arsenide (GaAs) having different morphologies such as nanoparticles [ 22 , 23 ], nanorods [ 24 , 25 ], nanocrystals [ 26 , 27 ], nanopillars [ 28 , 29 ], nanowires [ 30 , 31 ], nanotubes [ 32 , 33 ], nanobelts [ 34 , 35 ], nanoneedles [ 36 , 37 ], etc. , have been fabricated by methods such as sol-gel [ 22 ], hydride vapor phase epitaxy (HVPE) [ 38 ], arc plasma [ 26 ], RF sputtering [ 23 , 39 ], inductively coupled plasma (ICP) [ 28 ], thermal evaporation [ 40 ], electrochemical [ 41 ], molecular beam epitaxy (MBE) [ 42 ], pulsed laser ablation [ 43 ], pulsed electron deposition [ 44 ], pulsed laser deposition (PLD) [ 45 ], laser-assisted catalytic growth [ 46 ], and modified DPF devices [ 16 , 17 , 18 ].…”

“…The modified DPF device has been successfully used for the fabrication of nanostructures of III–V semiconductors, such as GaN [ 16 ] and GaAs [ 17 , 18 ], without any substrate heating/biasing and annealing of deposited material. In particular, GaAs has potential applications in photovoltaic [ 44 ], electronic and optoelectronic [ 17 , 47 , 48 ] devices.…”