A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

Abstract

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type SnO 2 . Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide (SnO 2 ) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at 150 o C℃ , ZnO annealed at 200 o C and SnO 2 annealed at 100 o C. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150 ℃ . This is the middle level in compared with those of ZnO annealed at 200 o C and SnO 2 annealed at 100 o C℃ . The electrical properties of ZTO followed those of SnO 2 , which acts a an enhancer in the oxide semiconductor.

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

“…The threshold voltage (V TH ) showed negative shifts as the increase in the In contents of the channel, which typically suggests that the conduction carriers might be additionally generated within In-richer IGZO channels. 13,21 The highest μ FE was obtained to be 36.9 cm 2 /(V s) for the Dev. C. It was noticeable that there were marked differences in μ FE between the devices using ITO and Mo S/D electrodes.…”

“…It was typically found that the on-current ( I ON ) and μ FE values increased with increasing the In contents within the IGZO active channel layers for both sets of devices using ITO and Mo S/D electrodes. The threshold voltage ( V TH ) showed negative shifts as the increase in the In contents of the channel, which typically suggests that the conduction carriers might be additionally generated within In-richer IGZO channels. , The highest μ FE was obtained to be 36.9 cm 2 /(V s) for the Dev. C. It was noticeable that there were marked differences in μ FE between the devices using ITO and Mo S/D electrodes.…”

Characterization on the operation stability of mechanically flexible memory thin-film transistors using engineered ZnO charge-trap layers

“…The most impressive feature was that the relative areal ratios of peaks A and B remarkably decrease and increase, respectively, as an increase in the deposition temperature. This implies that the ZnO thin films deposited at higher temperatures contain a larger number of oxygen-related defects, such as oxygen vacancies and weak metal-oxygen bonds [21,22]. The ALD reactions for the formation of ZnO thin films can be incompletely carried out at lower temperatures since the thermal energy required for the ALD reaction is relatively low and the degree of purge for residual H 2 O is insufficient.…”

Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

“…% Al (AZO) were deposited by ALD at 150 and 180 °C as a gate insulator and a gate electrode, respectively, and patterned by wet chemical etching (Figures d,e). The fabricated devices were treated with postannealing process at 150 °C for 1 h in an oxygen atmosphere. Figure a shows a microscopic image of the fabricated flexible VTFT. The metal–semiconductor–insulator–metal (MSIM) capacitors were also fabricated on the same substrate to evaluate the electrical properties of the ALD-grown active layers and to elucidate feasible process damages.…”

“…The fabricated devices were treated with postannealing process at 150 °C for 1 h in an oxygen atmosphere. 24 Figure 2a shows a microscopic image of the fabricated flexible VTFT.…”