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Abstract— High‐performance top‐gate thin‐film transistors (TFTs) with a transparent zinc oxide (ZnO) channel have been developed. ZnO thin films used as active channels were deposited by rf magnetron sputtering. The electrical properties and thermal stability of the ZnO films are controlled by the deposition conditions. A gate insulator made of silicon nitride (SiNx) was deposited on the ZnO films by conventional P‐CVD. A novel ZnO‐TFT process based on photolithography is proposed for AMLCDs. AMLCDs having an aperture ratio and pixel density comparable to those of a‐Si:H TFT‐LCDs are driven by ZnO TFTs using the same driving scheme of conventional AMLCDs.

Highly crystalline α-phase gallium oxide (Ga2O3) thin films were grown by fine-channel mist chemical vapor deposition on c-sapphire substrates at 400 °C at a deposition rate of more than 20 nm/min. The thin films were doped with Sn(IV) atoms, which were obtained from Sn(II) chloride by the reaction SnCl2+ H2O2+ 2HCl→SnCl4+ 2H2O. Conductive α-phase Ga2O3 thin films were successfully grown from source solutions containing less than 10 at. % Sn(IV). The source solution containing 4 at. % Sn(IV) resulted in obtaining a thin film with an n-type conductivity as high as 0.28 S cm-1, a mobility of 0.23 cm2 V-1 s-1, a carrier concentration of 7×1018 cm-3, and a full width at half maximum (FWHM) of the (0006) reflection X-ray rocking curve as low as 64 arcsec.