Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

Hirao, Takashi; Furuta, Mamoru; Hiramatsu, Takeshi; Matsuda, Tokiyoshi; Li, Chaoyang; Furuta, Hiroshi; Hokari, Hitoshi; Yoshida, Motohiko; Ishii, Hiromitsu; Kakegawa, Masayuki

doi:10.1109/ted.2008.2003330

Cited by 225 publications

(116 citation statements)

References 9 publications

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“…Zink based oxide semiconductors with high mobility must decrease the resistivity and mismatching at the interface between a channel and dielectric material [4][5][6][7][8][9]. Also, the understanding that a contact mechanism at the interface in a device is also an important factor.…”

Section: Introductionmentioning

confidence: 99%

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Oh¹

2016

Transactions on Electrical and Electronic Materials

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To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO 2 =1:1, the ZnO, SnO 2 and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO 2 and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO 2 was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO 2 and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO 2 .

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Section: Introductionmentioning

confidence: 99%

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Oh¹

2016

Transactions on Electrical and Electronic Materials

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“…2-5 TFT arrays for AMLCD were made using ZnO as a channel material for both top gate and bottom gate TFT structures. 6,7 It has been found that good quality ZnO film itself strongly tends to be polycrystalline, usually with preferential orientation, under nearly all deposition conditions. It was reported that traps in the dense grain boundaries of crystalline ZnO can severely affect the overall performance of the TFTs.…”

Section: Introductionmentioning

confidence: 99%

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Lim

White

2009

Journal of Applied Physics

118

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Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn3N2) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm2 V−1 s−1 for the as-deposited film produced at 50 °C and 110 cm2 V−1 s−1 after annealing at 400 °C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium–gallium–zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

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“…This is particularly true for a TFT based on a metal-oxide semiconductor, since its properties have been shown [4] to sensitively depend on the permeability of the cover layer during a heat-treatment. In practice, the channel region of a TFT is covered by one or a combination of a gatestack [3], [5] or a passivation layer [6]. Presently reported are the results of a comparative study on the effects of the interplay between the permeability of the coverage configuration and the annealing conditions on the characteristics of a ZnO TFT.…”

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confidence: 99%

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

Lü

Jiapeng

Wong

2014

IEEE Electron Device Lett.

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Abstract-The effects of different thermal processing on the characteristics of zinc oxide (ZnO) thin-film transistors (TFTs) with either gas-permeable or sealed gate-stack were studied and compared. The characteristics of a TFT heat-treated in a nonoxidizing ambience or under a sealed configuration degraded with increasing annealing temperature, though the former offered a comparatively wider process margin. On the other hand, the oxidization of the channel region of a TFT allowed by a gaspermeable gate-stack resulted in significant improvement in the transistor characteristics, e.g., eliminating the hysteresis and increasing the field-effect mobility to a relatively high value of 55 cm 2 /Vs. The difference in behavior is attributed to the annealing-dependent generation and annihilation of defects in ZnO under different coverage configurations, and suggests a general guideline on the thermal processing of ZnO TFTs.

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Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

Cited by 225 publications

References 9 publications

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

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Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

Cited by 225 publications

References 9 publications

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO2and ZTO Films

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO2and ZTO Films

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

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Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO₂and ZTO Films