High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Ye, Yan; Lim, Rodney; White, J. M.

doi:10.1063/1.3236663

Cited by 118 publications

(107 citation statements)

References 24 publications

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“…Figure 5(g) summarizes lÀR rms relation of the ZnO x N y thin films. Although the plots are scattered probably due to the influence of N e , as discussed later, they can be obviously classified into two groups below and above a critical R rms of $0.3 nm: All of the "completely" amorphous films showed l higher than 170 cm 2 V À1 s À1 , while l in the other films were at most $160 cm 2 V À1 s À1 and were in almost the same range as the reported data for the sputter-deposited ZnO x N y thin films [3][4][5] (shaded area in Fig. 5(g)).…”

supporting

confidence: 66%

“…Figure 6 showed the relation between l and N e of the PLD-grown ZnO x N y thin films together with the literature values for sputter-deposited ones. 3,5 The PLD-grown films containing nanocrystals (triangles) showed a peak l at N e of $1 Â 10 19 cm À3 , indicating a change in the dominant carrier transport mechanism at this critical N e as reported in amorphous oxide semiconductors. 21,24 A similar peak of l was observed for the sputter-deposited ZnO x N y although we have to take into account the influence of the chemical compositions on l: 4 the PLD-grown films have a constant anion composition of N/(NþO) $ 0.6 whereas the sputterdeposited films showed a wide variety of chemical composition 5 (Fig.…”

Section: (A) Andmentioning

confidence: 71%

“…Shaded area represents the mobility range reported for sputter-deposited ZnO x N y thin films. [3][4][5] mobility enhancement in these films: It is generally known that the lÀN e curves of oxide semiconductors have a broad peak at the critical N e . Indeed, the lÀN e curves of the ZnO x N y films containing nanocrystals show a broad peak.…”

Section: (A) Andmentioning

confidence: 99%

“…3 In contrast to the conventional AOSs, amorphous ZnO x N y is an alloy of an oxide (ZnO, wurtzite) and a nitride (Zn 3 N 2 , anti-bixbyite) that have the same cation. A remarkable feature of amorphous ZnO x N y is its high electron Hall mobility, over 100 cm 2 V À1 s À1 , [4][5][6] which is comparable with the highest reported values for AOSs.…”

mentioning

confidence: 99%

“…In the previous studies, [3][4][5][6] ZnO x N y thin films were fabricated by reactive sputtering. However, sputtering frequently causes unintentional substrate heating 9,10 and collisions of high-energy particles with the film surface during deposition, which would induce crystallization of the film.…”

mentioning

confidence: 99%

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Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Yamazaki

Shigematsu

Hirose

et al. 2016

Applied Physics Letters

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Zinc oxynitride (ZnOxNy) has attracted much attention as an amorphous semiconductor with high electron mobility. Recent studies reported that ZnOxNy thin films grown by sputtering contained nanocrystals, which might reduce their electron mobility through grain boundary scattering. In this study, we fabricated amorphous ZnOxNy thin films on a glass substrate by a less-energetic nitrogen-plasma-assisted pulsed laser deposition (PLD) to suppress the formation of the nanocrystals. Grown by PLD under optimized conditions, these ZnOxNy thin films exhibited extremely flat surfaces with a root-mean-squared roughness (Rrms) of less than 0.3 nm. The Hall mobility of these films exceeded 200 cm2 V−1 s−1 at a critical carrier concentration of ∼1 × 1019 cm−3, which was twice as high as the reported values for sputter-deposited films. Meanwhile, the mobility of films with larger Rrms was limited to ∼160 cm2 V−1 s−1 even at the critical carrier concentration and comparable with that of the sputter-deposited ZnOxNy films. The substantial enhancement in mobility in extremely flat ZnOxNy films demonstrated that suppressing the formation of nanocrystals is the key to fabricating amorphous ZnOxNy thin films with very high mobility.

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supporting

confidence: 66%

Section: (A) Andmentioning

confidence: 71%

Section: (A) Andmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Yamazaki

Shigematsu

Hirose

et al. 2016

Applied Physics Letters

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Device Simulation of 25.9% Efficient ZnOxNy${\rm ZnO}_x{\rm N}_y$/Si Tandem Solar Cell

Bergsbak,

Nordseth,

Saxegaard

et al. 2024

Advcd Theory and Sims

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The novel, high electron mobility material has been investigated theoretically as an absorber in a two‐terminal tandem solar cell. In addition to its high mobility, can attain sufficiently low carrier concentration to enable ‐junctions, and has a tunable bandgap around the 1.7 eV range. It is therefore suitable for pairing with a Si‐based bottom cell. In addition to the layer, the tandem cell consists of a emitter and a Si heterojunction bottom cell. A buffer layer is introduced between the emitter and absorber in the top cell to mediate a large valence band offset that resulted in a poor fill factor, . A buffer layer bandgap of 1.5 eV gave the highest power conversion efficiency (PCE). The objective is to estimate the optimal performance of in a tandem solar cell. The dependence of current–voltage (–) characteristics on thickness, mobility and carrier concentration in the layer is evaluated, and found to yield maximum performance with 0.35 , 250 Vs–1 and , respectively. Using these conditions, the – parameters of the device under AM1.5 illumination are short circuit current density, mA , open circuit voltage, V, and . With this, it is reported on, to the best of the knowledge, the first device simulation based on .

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High‐Mobility and Air‐Stable Amorphous Semiconductor Composed of Earth‐Abundant Elements: Amorphous Zinc Oxysulfide

Zhu

Yamazaki

Жен

et al. 2019

Adv Elect Materials

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Amorphous oxide semiconductors (AOSs) have been studied extensively as the channel layer of thin-film transistors and as the transparent conducting electrode of optoelectronic devices due to their high electron mobility (>10 cm 2 V −1 s −1) and low processing temperature, which makes them applicable to flexible electronics on plastic substrates. [1-4] In general, AOSs are alloys of post-transition metal oxides with different crystal structures and cation radii, such as In 2 O 3-Ga 2 O 3-ZnO (IGZO). However, most high-mobility AOSs contain the rare metal In as their main component, and thus continuous efforts have been made to develop In-free alternatives. [5-9] Recently, it was reported that amorphous ZnO x N y , an alloy of ZnO (wurtzite structure) and Zn 3 N 2 (anti-bixbyite structure), exhibits very high mobility (>100 cm 2 V −1 s −1) and good performance as the channel layer of thin-film transistors (TFTs). [10-13] These studies point to Zn-based mixed-anion compounds as promising candidates for rare-metal-free amorphous semiconductors. However, ZnO x N y is chemically unstable in air, presumably owing to the weak chemical bonds between Zn and N. It has been reported that an amorphous ZnO x N y thin film gradually lost its N and was fully oxidized after 30 days under ambient conditions. [14] Thus, a new combination of chemically stable Zn-based compounds is needed. In this study, we focused on ZnO x S y , an alloy of ZnO and ZnS with a zinc-blende structure, as a candidate for such compounds, because ZnS is stable in air. Thus far, attempts of S-doping into crystalline ZnO or O-doping into crystalline ZnS have been made to modify the physical properties of host crystals. [15-18] Alloy films of ZnO and ZnS have also been used as a buffer layer for solar cells of CuIn 1−x Ga x Se 2−y S y , [19-25] Cu 2 ZnSnS 4 , [26] and SnS [27-29] because of their controllable band alignment. While these studies reported that ZnO x S y could become amorphous for an intermediate composition range, [18,20,30-32] the electrical transport properties of amorphous ZnO x S y (a-ZnO x S y) thin films, including carrier concentration and Hall mobility, have not been studied, except for the Amorphous oxide semiconductors have been widely studied as key materials for flat panel displays and flexible electronics devices. Recently, it has been reported that an amorphous mixed-anion semiconductor consisting of only earth-abundant elements, zinc oxynitride, shows high electron mobility and good performance as the channel layer of a thin-film transistor. However, amorphous zinc oxynitrides are unstable in air. It is demonstrated that another type of earth-abundant amorphous mixed-anion semiconductor, amorphous zinc oxysulfide (a-ZnO x S y) thin film, exhibits electron mobilities comparable to those of conventional amorphous oxide semiconductors, in addition to good chemical stability under ambient conditions. a-ZnO x S y thin films with a wide compositional range are fabricated through pulsed laser deposition, by alternately depositing ZnO a...

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High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Cited by 118 publications

References 24 publications

Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Device Simulation of 25.9% Efficient ZnOxNy${\rm ZnO}_x{\rm N}_y$/Si Tandem Solar Cell

High‐Mobility and Air‐Stable Amorphous Semiconductor Composed of Earth‐Abundant Elements: Amorphous Zinc Oxysulfide

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