A Study on Carbon Incorporation in Semi-Insulating GaAs Crystals Grown by the Vapor Pressure Controlled Czochralski Technique (VCz) Part I: Experiments and Results

Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

“…For the first time in such experiments without boric oxide encapsulant, the carbon concentration could be reduced markedly by using the controlling gas mode already described earlier [23]. Up to now there was no experimental evidence whether the presence of the boric oxide layer is necessary for this process.…”

2D simulation of carbon transport at the growth of GaAS crystals by liquid encapsulated Czochralski techniques

“…The control of carbon concentration during vapor pressure-controlled Czochralski (VCz) growth [1], as well as during conventional LEC [2] growth of GaAs crystals, is of crucial importance for achieving the desired electrical crystal parameters. Today, the carbon concentration is commonly adjusted empirically by maintaining a certain CO partial pressure in the growth atmosphere [1,2].…”

“…Today, the carbon concentration is commonly adjusted empirically by maintaining a certain CO partial pressure in the growth atmosphere [1,2]. A critical point of this procedure is that it is difficult to transfer the parameters empirically found for a given experimental geometry to another, e.g., to different chamber, crystal, and crucible sizes.…”