A Study on Crystallization Kinetics of Thermoelectric Bi₂Se₃ Crystals in Ge–Se–Bi Chalcogenide Glasses by Differential Scanning Calorimeter

Abstract

Novel glass‐ceramics with embedded thermoelectric Bi2Se3 crystals were prepared from glass matrices in the Ge20Se100−xBix (x = 5, 10, 12 mol%) system. Based on DSC results performed at different heating rates, characteristic activation energies (Ec) and Avrami exponents (n) were obtained and analyzed by using Kissinger's relation, Ozawa's method, Augis–Bennett approximation and Matusita–Sakka theory. XRD results showed that pure Bi2Se3 crystalline phase precipitated upon annealing at different temperatures for various time. The crystal size and crystalline fraction in the samples could be tuned by controlling the annealing time.

Non‐isothermal crystallization kinetics of Al2O3‐YAG amorphous ceramic coating deposited via plasma spraying

“…The typical Johnson‐Mehl‐Avrami (JMA) theoretical model was widely used to determine the crystallization kinetics of amorphous materials . According to the JMA model, various methods were evolved under non‐isothermal conditions as presented in the following text.…”

“…The typical Johnson-Mehl-Avrami (JMA) theoretical model was widely used to determine the crystallization kinetics of amorphous materials. 13,14 According to the JMA model, various methods were evolved under non-isothermal conditions as presented in the following text. Though based on a first order reaction, the Kissinger equation has been the most commonly used method in analyzing the crystallization process, and can be applied to any reaction with an error <5%.…”

Devitrification of Bi- and Ga-containing germanium-based chalcogenide glasses

“…The second family of crystallization processes occurred in high-temperature region (peaks IV-VI) can be related to the crystallization of stable Ge-Te (GeTe, Ge 2 Te 3 or Ge 17 Te 83 ) [17,21], Ge-Se (GeSe, GeSe 2 , Ge 4 Se 9 ) or mixed phases. Despite the crystallization of GeSe 2 phase is reported for Ge-Se-Bi [22] and Ge 20 Se 50 Te 30 [23] glasses in a similar temperature range, the crystallization of this phase in pure Ge-Se system usually is observed at higher temperatures (~530 o C) [24,25]. Although there is a possibility that existence of Ga-/Bi-based crystallites and addition of Te can facilitate the crystallization of GeSe 2 phase, triggering it at lower temperatures, the obtained Raman and XRD data have little support of its formation in present materials after heat treatment.…”

Effect of P/Bi substitution on optical and thermal properties of Ga-Ge-Se-Te glasses

“…The latter allows further enhancement of the intrinsic physical properties of these materials through the nanoscale design. In particular, several chemical elements (Bi, Sb, rare earth, Ga) are shown to modify these glasses at the nanoscale, leading to significant changes in their electrical conductivity [5,6], thermo-electric behavior [7][8][9][10], phase-change memory effect [11,12], potential to host low-dimensional quantum systems [13][14][15][16], unique optical properties [1,17], and other interesting phenomena. The combination of all these features makes chalcogenide alloys modified at nanoscale a very appealing multifunctional medium for numerous applications, including (nano)optics and (nano)electronics [9][10][11][12][13][14][15][16][17][18][19].…”