A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors

Chen, Wei Chen; Lin, Horng−Chih; Lin, Zer Ming; Hsu, Chin Tsai; Huang, Tiao‐Yuan

doi:10.1088/0957-4484/21/43/435201

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…Originally, flexible substrates could not be used directly in high-temperature chemical vapor deposition (CVD)-grown nanotubes. Motivating by the demands of growing materials on flexible substrates without high temperature condition, transfer printing technique was developed to transfer materials from growth substrates (donor substrate) to designed substrates (acceptor substrate) . Through transfer printing mediator, original patterning structures can be transferred from donor substrate onto acceptor substrate via controlling surface interaction properties of chemical or physical.…”

Section: Printing Techniquesmentioning

confidence: 99%

“…Motivating by the demands of growing materials on flexible substrates without high temperature condition, transfer printing technique was developed to transfer materials from growth substrates (donor substrate) to designed substrates (acceptor substrate). 51 Through transfer printing mediator, original patterning structures can be transferred from donor substrate onto acceptor substrate via controlling surface interaction properties of chemical or physical. The major physical or chemical interactions generally correlate with capillary and Van der Waals force.…”

Section: Transfer Printingmentioning

confidence: 99%

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Printed Thin-Film Transistors: Research from China

Tong

Sun

Yang

2018

ACS Appl. Mater. Interfaces

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Thin-film transistors (TFTs) have experienced tremendous development during the past decades and show great promising applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFT components including semiconductors, dielectrics and electrodes, as well as fully printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed.

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Section: Printing Techniquesmentioning

confidence: 99%

Section: Transfer Printingmentioning

confidence: 99%

Printed Thin-Film Transistors: Research from China

Tong

Sun

Yang

2018

ACS Appl. Mater. Interfaces

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Recent Advances in Flexible Organic Synaptic Transistors

Liu

Huang

et al. 2021

Adv Elect Materials

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organic electronic devices have attracted substantial attention. [18][19][20][21][22][23][24] However, many issues still exist. For instance, the flexible substrates can be easily bent and thus cause damage to the devices or affect their electrical performance. Moreover, the flexible substrates are sensitive to operating conditions and are unstable during longterm operation. [25][26][27][28][29] Therefore, many research groups have dedicated their efforts to study and improve the flexibility and stretchability of organic electronic devices. [30][31][32][33] In recent years, organic three-terminal synaptic transistors have evolved from two-terminal devices to avoid the problem of crosstalk between adjacent cells. [34] This is an evolutionary structural design to improve the function of organic synaptic devices. In addition, the organic three-terminal synaptic transistors can be designed to form a highly interconnected neural network system. [35] At the same time, the organic three-terminal synaptic transistors can concurrently receive and read stimuli, which is conducive to the design of multiple input devices. [36] Currently, the threeterminal artificial synapses devices based on flexible organic transistors are considered to be the representative structures of biomimetic devices, which can be used to simulate the plasticity of biological synapses. [37,38] Compared with the traditional inorganic synaptic devices, the flexible organic synaptic transistors (FOSTs) can be used to simulate the plasticity of the human brain with a simpler structure and lower manufacturing cost. Therefore, a FOST is a promising component of future organic neuromorphic systems. [39][40][41][42][43][44][45][46] To date, the FOSTs have been widely used in wearable electronic devices and intelligent e-skins. [47][48][49] In 2018, a flexible artificial afferent nerve was reported by Xu et al. [47] representing significant progress toward the development of intelligent e-skin and soft robotics. This paper reviews the recent progress in the development of FOSTs and their applications in neuromorphic systems. Generally, the FOSTs are divided into four categories: flexible organic floating-gate synaptic transistors (FO-FGSTs), flexible organic ferroelectric-gate synaptic transistors (FO-FeGSTs), flexible organic electrolyte-gate synaptic transistors (FO-EGSTs), and flexible organic optoelectronic synaptic transistors (FO-OSTs). First, a brief introduction of the device structure mostly used in the FOSTs is provided. Then, the selection of substrate materials, gate dielectric materials, organic channel materials, and electrode materials in the FOSTs is summarized. Next, the major advances of these FOSTs and their potential applications are reviewed and discussed. Lastly, the summary, outlook, and In recent years, flexible organic synaptic transistors have attracted considerable attention due to their flexibility, biocompatibility, easy processability, and reduced complexity. Flexible organic synaptic transistors have functions and structures sim...

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Stretchable Transistor‐Structured Artificial Synapses for Neuromorphic Electronics

Wang

Yang

et al. 2023

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Stretchable synaptic transistors, a core technology in neuromorphic electronics, have functions and structures similar to biological synapses and can concurrently transmit signals and learn. Stretchable synaptic transistors are usually soft and stretchy and can accommodate various mechanical deformations, which presents significant prospects in soft machines, electronic skin, human–brain interfaces, and wearable electronics. Considerable efforts have been devoted to developing stretchable synaptic transistors to implement electronic device neuromorphic functions, and remarkable advances have been achieved. Here, this review introduces the basic concept of artificial synaptic transistors and summarizes the recent progress in device structures, functional‐layer materials, and fabrication processes. Classical stretchable synaptic transistors, including electric double‐layer synaptic transistors, electrochemical synaptic transistors, and optoelectronic synaptic transistors, as well as the applications of stretchable synaptic transistors in light‐sensory systems, tactile‐sensory systems, and multisensory artificial‐nerves systems, are discussed. Finally, the current challenges and potential directions of stretchable synaptic transistors are analyzed. This review presents a detailed introduction to the recent progress in stretchable synaptic transistors from basic concept to applications, providing a reference for the development of stretchable synaptic transistors in the future.

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A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors

Cited by 4 publications

References 15 publications

Printed Thin-Film Transistors: Research from China

Printed Thin-Film Transistors: Research from China

Recent Advances in Flexible Organic Synaptic Transistors

Stretchable Transistor‐Structured Artificial Synapses for Neuromorphic Electronics

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