A study on mobility degradation in nMOSFETs with HfO2 based gate oxide

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

“…This is in contrast with the common believe that DipQ can reproduce the mobility with lower DV th than the RemQ. 13,51,52 Such DipQ densities are also much larger than the ones obtained by ab initio calculations on the SiO 2 /HfO 2 interface (Ref. 27) as discussed in Sec.…”

“…Several mechanisms could explain the observed mobility degradation, and a prominent role has been ascribed to soft optical phonons (SOph). [11][12][13][14] However, recent studies predict an influence of SOph on the electron mobility significantly weaker than previously thought. [15][16][17][18] Coulomb centers in the gate stack (RemQ) have also been proposed as a possible cause of the mobility reduction, 4,19 but very large charge densities seem to be necessary to justify the experimental mobility degradation, 15,17 which appear to be inconsistent with the flat band voltage shift [20][21][22] and with direct RemQ density measurements obtained with modified charge pumping methods.…”

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO2 gate dielectrics deposited by an oxygen-doped solution

“…More importantly, it can be seen clearly that ODS can effectively reduce the off drain current and increase the on drain current of the transistor, resulting in a significant increase in the drain current I on /I off ratio from 10 4 for the non-ODS-ZrO 2 TFT to 10 6 for the 30 min ODS-ZrO 2 TFT. The increase in the drain current for the ODS-ZrO 2 /In 2 O 3 TFT may be attributed to the enhanced carrier mobility since a better ZrO 2 -In 2 O 3 interface can reduce the interface Coulomb scattering from impurities and traps [34].…”