Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO₂ gate dielectrics deposited by an oxygen-doped solution

Abstract

Solution deposition of high-quality dielectric films is one of the big challenges in achieving excellent electrical performance of bi-layer solution-processed metal oxide (MO) thin film transistors (TFTs). Using an oxygen-doped precursor solution (ODS), we successfully deposited high-quality zirconium oxide (ZrO2) dielectric films by a solution process. The ODS-ZrO2 films show low leakage current density (10−7 A cm−2 at 2 MV cm−1), high breakdown electric field (7.0 MV cm−1) and high permittivity (19.5). Consequently, solution-processed indium oxide (In2O3) TFTs with ODS-ZrO2 film as the gate dielectric show excellent electrical performance, for example high carrier mobility up to 62.02 cm2 V s−1, a large on/off drain current ratio of 3.0 × 106, a small subthreshold swing of 0.14 V and excellent bias stress stability. Our work demonstrates the critical role of the dielectric film in the electrical performance of MO-TFTs. More importantly, we reveal that high dielectric constant (κ) dielectric film deposited with ODS should be an effective way to significantly increase the electrical properties of MO-TFTs for future low-cost, high-performance applications.

High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

“…These values are comparable to the values of previously reported dielectric thin films, which deposited by solution processed. [30,[45][46][47][48][49][50][51][52][53] And it can be due to the fact that the solution-processed HAO thin film exhibits relatively more complete oxide lattice formation and densification, resulting in the higher k value when annealed at higher laser peak temperature. Furthermore, the C-f measurements exhibit that the device (annealed at laser peak temperature of 800 °C) is more stable in the range of measured frequencies that its average capacitance also is higher than the ones of other laser peak temperatures, that it is consistent with the C-V results.…”

All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors

“…The obtained high dielectric constants of the hybrid dielectrics are very important and play a crucial role to achieve TFTs with low operating voltages. 63…”

“…The obtained high dielectric constants of the hybrid dielectrics are very important and play a crucial role to achieve TFTs with low operating voltages. 63 To assess the chemical nature of the hybrid dielectric thin film surfaces, we performed water contact angle and surface energy measurements. The dielectric surface energy plays a major role to enable a suitable dielectric/semiconductor interface to enhance the charger carrier transport in TFTs.…”

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

“…The research on insulating layers is a heated topic in the field of thin film transistors (TFTs), since gate dielectric materials have great effects on the device as a key component of TFT [ 1 , 2 , 3 , 4 , 5 ], and more concern about better performance of the gate dielectric materials has been attracted nowadays. Dielectric properties of materials determine the ability to store charges and influence the leakage current between gate and active layer directly.…”