Here, a three-terminal optoelectronic synapse is simply fabricated based on chitosan (CS)/indium gallium zinc oxide (IGZO) with a combination of electrical and optical simulations, which successfully emulates the key features of biological synapses of learning and memory behavior, in particular the reproduction of the typical Hebbian spike-time dependence plasticity (STDP) rule and 2794.6% of the maximum paired-pulse facilitation (PPF) under electrical stimulation. Creating an analogy to device characteristics, more importantly, memory behavior was studied with changes of the human internal state (comfortable and uncomfortable) and the external environment stimuli (quiet and noise); this showed the best results, longest forgetting time and good memory effect, under a comfortable internal state and a quiet environment. Our results suggest that solution-gated IGZO-based electric-double-layer transparent phototransistor transistors could act as platforms for synaptic and human behavior simulation.

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In this article, laser scanning annealing is used for the fabrication of solution-processed tungsten–zinc–tin-oxide thin-film transistors (WZTO TFTs) with low temperatures and fast processing. The high-transient intensity of the scanning laser is beneficial to the effective conversion of precursors to metal–oxide lattices, which is also verified by the X-ray photoelectron spectroscopy analysis. Moreover, no apparent phase transformation and lattice expansion exist during laser irradiation of stable amorphous structures of a-WZTO thin films, as observed from the results of X-ray diffraction, Raman scattering spectroscopy, and transmission electron microscopy. Based on laser scanning techniques, the large optical band gap (3.88 eV) is an important factor to realize a high optical performance of WZTO TFTs. The solution-processed WZTO TFT with laser scanning annealing exhibits much better performance with high mobility (up to 4.99 cm2 V–1 s–1), compared to that with thermal annealing (1.27 cm2 V–1 s–1). More importantly, this method is applicable for a wide range of metal–oxide semiconductors and polymer substrates, by solving the incompatibility between solution-processed metal–oxide semiconductors and polymer substrates because of high processing temperatures. Therefore, it shows tremendous potential to be applicable for a wide range of sensors, displays, and circuits. These results demonstrated that the laser scanning annealing provides a promising tool to simplify the fabrication of low-temperature polycrystalline oxide TFTs, when simultaneously utilizing the metal–oxide–semiconductor TFT and low-temperature polycrystalline silicon TFT processes with low cost and high yield.

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In this letter, the performance of Zn-Sn-O (ZTO) thin film transistors (TFTs) has been greatly improved by Mo doping as an oxygen vacancy to control the residual electrons. The results show that the TFT with 3 at% Mo doping exhibits the best electrical characteristics with a high saturation mobility of 26.53 cm2 V−1 s−1, a threshold voltage of 0.18 V, a subthreshold swing of 0.32 V dec−1 and a large switching ratio of 2 × 106. The saturation mobility and switching ratio of Mo-doped Zn-Sn-O (MZTO, 3 at%) TFTs improved almost five and two orders of magnitude compared with ZTO TFTs, respectively. Therefore, the MZTO TFT has much potential for future electrical applications with its excellent properties.