A study on photoluminescence of interface layer of ZnTe/CdTe heterostructure

Kim, Y.H; Kim, I.J; Lee, S.D; Oh, Ki-Nam; Hong, Sung Yong; Kim, S.U; Park, M.J

doi:10.1016/s0022-0248(00)00090-7

Cited by 4 publications

(1 citation statement)

References 7 publications

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“…Before passivation, the surface of Cd 1Àx Zn x Te is etched by 2% bromine-20% lactic acid in ethylene glycol solutions as reported previously [6] in order to reduce the surface trap state due to various defects such as dangling bonds or impurities in the surface. In principle, surface passivation technologies include deposited dielectric materials (ZnS, SiO 2 ), the native films (oxides, sulphides, fluorides), and in situ grown heterostructures where a wider band gap II-VI compound is used for passivation [7][8][9]. In this article, the low temperature photoluminescence of ZnS/CdZnTe structure with the variation of ZnS thickness are studied for the optical property of ZnS thickness for the passivation.…”

Section: Introductionmentioning

confidence: 99%

The surface passivation of Cd1−xZnxTe as to ZnS thickness and pre-heating

Kim¹,

Kim²,

Kim³

et al. 2005

Current Applied Physics

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Section: Introductionmentioning

confidence: 99%

The surface passivation of Cd1−xZnxTe as to ZnS thickness and pre-heating

Kim¹,

Kim²,

Kim³

et al. 2005

Current Applied Physics

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Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces

Späth

Fritsche

Klein

et al. 2007

Applied Physics Letters

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The properties of nitrogen doped ZnTe films and in situ formed heterointerfaces to CdTe were investigated using photoelectron spectroscopy and electrical measurements. The p doping of ZnTe with nitrogen is controlled during physical vapor deposition with an additional nitrogen plasma source. The resistivity was determined by four-point measurements and a minimum resistivity of = 0.04 ⍀ cm was found. The valence band offset of the CdTe/ ZnTe interface is E VBO = 0.05 eV.

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Electrochemical deposition of ZnTe thin films

Mahalingam

John

Rajendran

et al. 2002

Semicond. Sci. Technol.

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The electrodeposition of zinc telluride (ZnTe) thin films on tin conductive oxide substrates in aqueous solution containing TeO 2 and ZnSO 4 was studied. The electrodeposition mechanism was investigated by cyclic voltammetry. The appropriate potential region where formation of stoichiometric ZnTe semiconductor occurs, was found to be −1.1 V versus saturated calomel electrode, and the pH was maintained at 3.5 ± 0.1. The crystallographic structure of the deposited film is seen to be cubic with a preferential orientation along the (111) phase. Optical absorption studies reveal a bandgap of 2.26 eV and optical constants (n and k) are evaluated. Scanning electron microscopy imaging was used to study the surface morphology. The composition of ZnTe films was analysed using an electron microprobe analyser, and the results are discussed.

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A study on photoluminescence of interface layer of ZnTe/CdTe heterostructure

Cited by 4 publications

References 7 publications

The surface passivation of Cd1−xZnxTe as to ZnS thickness and pre-heating

The surface passivation of Cd1−xZnxTe as to ZnS thickness and pre-heating

Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces

Electrochemical deposition of ZnTe thin films

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