A study on refractive index dispersion and optoelectronic parameters of the BCzVB OLED material by using solution method

Mantarcı, Asim; Gündüz, Bayram

doi:10.1007/s11082-016-0822-5

Cited by 10 publications

(4 citation statements)

References 38 publications

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“…Gallium nitride (GaN) high thermal conductivity material that makes it ideal for use in different sensors applications [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28], solar cells [19,20], light-emitting diode devices [21][22][23], short wavelength optical devices [24], high-power transistors [25,26], and beta-voltaic devices [27].…”

Section: Introductionmentioning

confidence: 99%

Synthesize of GaN/quartz Nanostructure Using Pulsed Laser Ablation in Liquid for Optoelectronic Devices

Amir

Fakhri

Alwahib

et al. 2021

Preprint

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This study involves synthesizing gallium nitride (GaN) nanoparticles (NPs) under six different ablation energies using the pulsed laser ablation method. The nanoparticle was deposited using drop cast method on a quartz substrate. XRD pattern shows two peaks of h-GaN nanoparticles at 2θ = 34.64 and 37.98, reflected from (002) and (100) planes. The morphological properties indicate the hexagonal crystal nature of GaN that shows in the XRD pattern. Photoluminescence (PL) spectra show the highest laser power, 2000 mj has a minor emission peaked at 3.34 eV. The maximum emission peak 3.83 eV at 1400 mJ. The study depends on the pulsed laser to generate nanoparticles with different characteristics.

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Section: Introductionmentioning

confidence: 99%

Synthesize of GaN/quartz Nanostructure Using Pulsed Laser Ablation in Liquid for Optoelectronic Devices

Amir

Fakhri

Alwahib

et al. 2021

Preprint

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“…Due to these properties, this material has become one of the core materials of industrial devices. These devices can be a high-power transistor [16,17], optical device with a short wavelength [18], photo-detector [19], light emitting diode (LED) device [20][21][22], solar cell [23,24], pH sensor [25] and betavoltaic device [26]. Many thin film deposition techniques can be used to grow high-quality GaN thin films including pulsed laser deposition [27], metal-organic chemical vapour deposition [28], atomic layer deposition [29], molecular beam epitaxy (MBE) [30], thermionic vacuum arc [31,32], sputtering [33] and sol-gel [34].…”

Section: Introductionmentioning

confidence: 99%

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Mantarcı

Kundakçı

2019

Bull Mater Sci

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Gallium nitride (GaN) thin films were grown on the Al 2 O 3 (0001) substrate using radio frequency (RF) magnetron sputtering under various RF powers. Many experimental techniques were used for investigating the effects of RF power on the GaN thin film growth and its physical properties. The X-ray diffraction results confirmed that the GaN thin film had a polycrystalline structure with planes of (101) and (202). The structural parameters of the thin film changed with RF powers. It was also found that the optical band gap energy of GaN thin films varied with changing RF power. From the atomic force microscopy images, almost homogeneous, nanostructured and a low-rough surface of the GaN thin film can be observed. From scanning electron microscopy analysis, dislocations and agglomerations were observed in some regions of the surface of the GaN thin film. E 2 (high) optical phonon mode of GaN was observed, proving the hexagonal structure of the thin film. The residual stress in the GaN thin films was calculated from Raman measurements. Furthermore, an agreement between the experimental measurements was also examined. The morphological, structural and optical properties of the GaN thin film could be improved with altering RF power. These films could be used in devices such as light emitting diodes, solar cells and diode applications.

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“…GaN material belongs to III-nitrides group, having a direct wide band gap (∼3.4 eV), high electron mobility [12], and high breakdown voltage [13], high melting point [14], good mechanical hardness and thermal stability. It can be the basis for many significant device applications such as high-power transistors [15,16], solar cells [17,18], photodetectors [19], light emitting diodes (LED) [20][21][22] and optical devices with short wavelength [23]. Gallium nitride generally * E-mail: asimmantarci@gmail.com crystallizes in two phases, as a hexagonal structure and a cubic structure.…”

Section: Introductionmentioning

confidence: 99%

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Mantarcı

Kundakçı

2019

Materials Science-Poland

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GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E 2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

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A study on refractive index dispersion and optoelectronic parameters of the BCzVB OLED material by using solution method

Cited by 10 publications

References 38 publications

Synthesize of GaN/quartz Nanostructure Using Pulsed Laser Ablation in Liquid for Optoelectronic Devices

Synthesize of GaN/quartz Nanostructure Using Pulsed Laser Ablation in Liquid for Optoelectronic Devices

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

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