Synthesize of GaN/quartz Nanostructure Using Pulsed Laser Ablation in Liquid for Optoelectronic Devices

Abstract

This study involves synthesizing gallium nitride (GaN) nanoparticles (NPs) under six different ablation energies using the pulsed laser ablation method. The nanoparticle was deposited using drop cast method on a quartz substrate. XRD pattern shows two peaks of h-GaN nanoparticles at 2θ = 34.64 and 37.98, reflected from (002) and (100) planes. The morphological properties indicate the hexagonal crystal nature of GaN that shows in the XRD pattern. Photoluminescence (PL) spectra show the highest laser power, 2000 mj has a minor emission peaked at 3.34 eV. The maximum emission peak 3.83 eV at 1400 mJ. The study depends on the pulsed laser to generate nanoparticles with different characteristics.

A gold nanoparticles coated unclad single mode fiber-optic sensor based on localized surface plasmon resonance

“…The best results were obtained at an ablated energy of 1800 mJ, indicating a high structure crystallization as a result of the uniform distribution of tiny Au NPs produced at this energy. Additionally, as laser ablation energy increased, the XRD pattern's peak intensities increased due to an increase in grain size and material concentration as well as an improvement in crystal quality at 1800 mj 31 .…”

“…8. Equation ( 2) was used to determine the incident photon's energy (E g ) as a function of wavelength (λ) 31 .…”

Synthesis and characterization of GaN/quartz nanostructure using pulsed laser ablation in liquid

“…This technique has been commonly used in the past to prepare thin lms for high-quality multicomponent oxide ceramics. PLA is a perfect growth approach with many bene ts over other methods, such as being very easy to operate, having no toxic or costly precursors, and thin lm can be achieved at room temperatures [32,33].…”