A study on the characteristics of a wafer-polishing process according to machining conditions

Lee, Jung-Taik; Won, Jong-Koo; Lee, Eunsang

doi:10.1007/s12541-009-0004-5

Cited by 8 publications

(4 citation statements)

References 7 publications

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“…A common technique for achieving the desired thickness is fine double-sided polishing (Lee et al 2009;Schwandner et al 2014). Following Zhong et al (2017a, b), the quality and uniformity of the accepted thickness across the entire wafer may be affected by several parameters related to the polishing technique, such as: (i) distribution of pressure, relative velocity and temperature; (ii) flow of polishing fluid; and (iii) properties of the polishing pad.…”

Section: Validation Through An Implementation Showcasementioning

confidence: 99%

A smart process controller framework for Industry 4.0 settings

Cohen

Singer

2021

J Intell Manuf

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This paper presents a smart supervisory framework for a single process controller, designed for Industry 4.0 shop floors. This digitization of a full supervisory suite for a single process controller enables self-awareness, self-diagnosis, self-prognosis, and self-healing (by definition, these "self" elements are missing from other supervisory frameworks diagnosing numerous controllers in parallel). The proposed framework is aligned with the concept of a Cyber Physical System (CPS), since its implementation generates a rich cyber physical entity of the controlled process. This CPS entity can either be considered as the process digital twin, or can provide a solid basis for generating it. Finally, the framework includes the main characteristics of Industry 4.0, such as advanced use of Artificial Intelligence (AI) and big data analysis. The framework is based on four modules: (1) Control and Awareness module-performing both continuous process control and adjustments, as well as machine learning (ML) and statistical process control (SPC) for identifying abnormalities that require further diagnosis; (2) Process-diagnosis module-performing continual (recurrent) analysis of the process state and trends; (3) Prognosis and Healing module-performing prognosis and automated intervention via parameter changes, re-configurations, and automated maintenance; (4) External Interaction Platform-an interactive module for interfacing with experts, presenting them with the process analysis information and obtaining feedback from them as part of a learning process. Using an implementation showcase to illustrate the methodological framework's applicability, we demonstrate its real-world potential. The proposed framework could serve as a guide for implementing smart process control and maintenance systems in Industry 4.0 shop floors. It could also provide a firm basis for comparison with future suggested frameworks. Future research directions could include pursuing improvements to the proposed process control framework and validating the framework by case studies of its implementation.

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Section: Validation Through An Implementation Showcasementioning

confidence: 99%

A smart process controller framework for Industry 4.0 settings

Cohen

Singer

2021

J Intell Manuf

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“…Since various mechanical factors significantly change the CMP characteristics, [8][9][10][11][12][13][14] it is prudent to investigate how the pressure, and the size and number density of the abrasive affect the removal rate. In the present study, the removal rate is evaluated with abrasive sizes of 40 nm, 72 nm, and 82.5 nm, under pressures of 400 g/cm 2 and 800 g/cm 2 .…”

Section: Removal Testmentioning

confidence: 99%

“…Up to a certain threshold, increasing the relative velocity increases the removal rate, while past this threshold, the removal rate begins to decrease. 9 The optimum relative velocity depends on the pressure and the polishing slurry viscosity. As has been previously noted, 10 the decrease in the removal rate above the optimum relative velocity may be caused by a hydrodynamic effect that results in a poorer mechanical contact between the sapphire and the polishing pad.…”

Section: Introductionmentioning

confidence: 99%

The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer

Park

Kim

Lee

et al. 2015

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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Demand for sapphire wafer has increased with growth of LED market. Chemical mechanical polishing (CMP) comprises a large part of wafering cost since the CMP process requires approximately 3-6 hours. For longer polishing times, the cost of consumables (COC) in CMP increases the total wafering cost; hence, considerable efforts have been made to decrease the polishing time of sapphire wafers to reduce the COC. There are two main approaches to reduce polishing time: controlling the chemical factor and adjusting the mechanical factor. Controlling the chemical factor is a common approach to manipulating the removal rate and roughness. However, it is hard to control the chemical factor. Instead, this study investigates the effects of various mechanical factors. This paper focuses on the effect of high-pressure CMP on the material removal performance; the maximum applied pressure is ~800 g/cm 2 . The removal rate increases linearly with gradual increase of CMP pressure to 800 g/cm 2 . Finally, the effect of high pressure on the removal rate of, and frictional force on, sapphire wafer during CMP using different sized abrasives is investigated; the effect of the abrasives on the removal rate is likewise analyzed at different pressures.

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“…Now, CMP technology is extending its application fields from the planar surfaces of ULSI chips to the multi-layer structure of MEMS. 4,5 This study deals with a new approach of planarization in the copper bump forming process of the flip chip PCB. As the area of the flip chip becomes more limited than that of traditional wire bonding, I/O counts and conductivity are increased beyond those of chips formed by wire bonding.…”

Section: Introductionmentioning

confidence: 99%

Chemical mechanical planarization of copper bumps on printed circuit board

Jeong

Lee

et al. 2011

Int. J. Precis. Eng. Manuf.

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This paper deals with the planarization of copper bumps to improve the bonding performance and reliability of printed circuit board (PCB) manufacturing to improve by using flip chip during the fabrication process of the PCB. Authors tried to develop a novel planarization process using polishing techniques before the continuous process at the PCB fabrication. An experiment was implemented by mechanical polishing (MP) using alumina abrasives mixed with deionizer water (DIW), and by chemical mechanical polishing (CMP) added with oxidizer of HF. CMP showed superior results to MP with mirror surface less than Ra 3nm and minimum step height deviation of 1um, resulting in high bonding performance and reliability. Therefore, CMP is a strong tool for reserving a sufficient margin in the PCB manufacture process.

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A study on the characteristics of a wafer-polishing process according to machining conditions

Cited by 8 publications

References 7 publications

A smart process controller framework for Industry 4.0 settings

A smart process controller framework for Industry 4.0 settings

The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer

Chemical mechanical planarization of copper bumps on printed circuit board

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