A study on the effect of transition metal (Ti 4+ , Mn 2+ , Cu 2+ and Zn 2+ )-doping on visible light photocatalytic activity of Bi 2 MoO 6 nanorods

Mn 2+ ‐doped Zn 2 GeO 4 for photocatalysis hydrogen generation

“…However, there are no reports about the influence of Mn 2+ doping on the photocatalytic activity of Zn 2 GeO 4 . It has been reported that Mn 2+ doping can enhance the photocatalytic activity, which plays the charge separation role and increases light absorption capacity of the photocatalysts. Could Mn 2+ doping enhance the photocatalytic activity of Zn 2 GeO 4 ?…”

Hierarchical heterostructures of Bi2MoO6 microflowers decorated with Ag2CO3 nanoparticles for efficient visible-light-driven photocatalytic removal of toxic pollutants

“…However, the low carrier-separation rate and narrow photo-response range of Bi 2 MoO 6 substantially lower its photocatalytic performance [18–19]. To overcome this obstacle, various methods have been developed, including doping [20–21] and the construction of heterojunctions [22–33]. Particularly, the combination of Bi 2 MoO 6 with other semiconductors to construct heterojunction photocatalysts leads to an enhanced activity of Bi 2 MoO 6 , which originates from the increased charge separation at the interface [22–30].…”

Synthesis and Enhanced Photocatalytic Activity of Rare Earth Ion (Ce3+, Nd3+, Pr3+ or Sm3+) Doped Bi2WO6 Microspheres for Rhodamine B Degradation

“…The kinetic plots for RhB dye photodegradation over the various samples are shown in Figure b. A linear relationship is observed from the plots of ln( c 0 / c ) versus reaction time, which indicates that the photodegradation process follow a pseudo‐first order form . The corresponding apparent rate constant ( k ) acquired from various photocatalysts is 0.06665, 0.22241, 0.32692, 0.26211 and 0.19821 min −1 for BWO, CBWO, NBWO, PBWO and SBWO, respectively.…”

“…The band edge positions of the pure Bi 2 WO 6 can be calculated by the empirical equations E VB = X – E e + 0.5 E g and E CB = E VB – E g , where E VB is the valence band (VB) edge potential, E CB is the conduction band (CB) edge potential, X is the electronegativity of the semiconductor, E e is the energy of free electrons on the hydrogen scale (about 4.5 eV), E g is the band gap energy of the semiconductor (2.48 eV). The X value is the geometric mean of the electronegativity of the constituent atoms, which is 6.38 eV for Bi 2 WO 6 .…”

“…Herein, for the undoped Bi 2 WO 6 sample, E (h + ) (3.12 eV) is more positive than E (⋅OH/H 2 O) (2.68 eV) after the migration of the photogenerated carriers, hence h + can react with H 2 O to generate ⋅OH . However, E (e − ) (0.64 eV) is located lower than E (O 2 /⋅O 2− ) (0.13 eV) and cannot form ⋅O 2− . The energy of the VB and CB of all the doped Bi 2 WO 6 samples has also been calculated and has been given in Table .…”