A study on the secondary electron emission from Na-ion-doped MgO films in relation to the discharge characteristics of plasma display panels

Ahn, Sung Il; Lee, Seong Eui; Ryu, Si Hong; Choi, Kyung Cheol; Kwon, Sang Jik; Uchiike, Heiju

doi:10.1016/j.tsf.2008.08.176

Cited by 16 publications

(3 citation statements)

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“…In terms of isovalent and heterogeneous isomorphism, the dissolved oxides with valence lower than MgO should provide the largest effect in generation of the Fs defects in MgO lattice. The experiment with alkaline metal oxides support well this idea: in the mixed MgO films, the F and F + defects detected by cathode-luminescent technique were of main source of reducing initial firing voltage and increasing conductivity of the films [30][31][32][33]. For two-valent oxides, low solubility as ≤1 at.% (more often it is the detection limit rather than the real magnitude) and isovalence solid substituting could not radically alter the oxygen vacancy amount and only lowering EA via surface structural modification was taken to explain the SEEC change [34,36].…”

Section: General Trendssupporting

confidence: 58%

“…The oxides of different valence were tested in the search of the best effect on SEE properties of pure MgO. This was arranged by addition of alkaline metal oxides [30][31][32][33], alkaline-earth-metal oxides [34], transition metal oxides [35][36][37][38], rare earth oxides [39][40][41][42][43][44][45] and others [46][47][48][49]. The surprising thing was that results of all the studies after the additives showed a certain enhancement of SEE properties of MgO relate to the pure MgO although often this effect remained without any explanation.…”

Section: General Trendsmentioning

confidence: 99%

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Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects

et al. 2021

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Doping process is widely used to improving emission performance of MgO films thicker than 10 nm via assisting the surface recharge and changing in electron structure. The present paper briefly reviews this strategy in a search for the new materials and structures being effective for secondary electron emission (SEE) and their diagnostics. Then, Metal-Organic Chemical Vapor Deposition (MOCVD) coupled with the specially selected precursor is suggested here as a new technique that transforms the refractory oxides to nanoscale, defect-disordered materials able to solid-solid interaction at 450 °C. Primary experiments have been performed for demanded mixed films based on MgO with ZrO2 and CeO2 additions. A dopant impact on facilitating the formation of oxygen vacancies in the host oxide and on the features of new mixed phases have been studied by new diagnostic means, based primarily on chemical method of differential dissolution. The method brought out the effective solvents that were the probes for identifying the nanoscale and amorphous phases possessing by the different defects on the surface of MgO films and determining contents of these phases. This approach allowed us to explain the origin of mixed phases and to estimate contribution of each from them in the macroscopic SEE properties.

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Section: General Trendssupporting

confidence: 58%

Section: General Trendsmentioning

confidence: 99%

Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects

et al. 2021

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“…It has been found theoretically [3][4][5] and experimentally [6] that occupied defect states such as oxygen vacancy (F center) lying in the band gap of MgO can cause an increase in the SEE yield. An interesting way of measuring the VB structure of MgO using the Auger self-convolution has been newly demonstrated [7].…”

Section: Introductionmentioning

confidence: 99%

Defect states of transition metal-doped MgO for secondary electron emission of plasma display panel

Lee

2014

Journal of Information Display

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High secondary electron emission (SEE) yield is one of the important properties of MgO for industrial applications such as alternating-current plasma display panel (AC-PDP), which reduces the firing voltage for discharge. SEE induced by lowenergy Ne and Xe ions can be described by potential emission mechanism of Auger neutralization. Defect states in MgO can play an important role in enhancing the SEE. The electronic density of states of Ti-, Cr-, Fe-, Ni-, Zn-doped and undoped MgO was calculated using CASTEP. The occupied defect levels of the Ti-, Cr-, Fe-, Ni-and Zn-doped MgO are at 5.23, 3.90, 2.76, 1.22 and 0.06 eV above the valence band, respectively. Higher defect level appears to be advantageous for getting larger SEE yield. Considering the fact that Ti-doped MgO reveals n-type conductivity, Cr seems to be the proper dopant among the studied elements for the purpose of high SEE yield in AC-PDP.

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A New Design for Secondary Electron Measurement and Application

Liu

Yan

2018

Springer Proceedings in Physics

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A study on the secondary electron emission from Na-ion-doped MgO films in relation to the discharge characteristics of plasma display panels

Cited by 16 publications

References 17 publications

Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects

Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects

Defect states of transition metal-doped MgO for secondary electron emission of plasma display panel

A New Design for Secondary Electron Measurement and Application

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