A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

Lin, Yi‐Cheng; Jian, Yu-Ci; Jiang, Jie

doi:10.1016/j.apsusc.2007.10.012

Cited by 52 publications

(30 citation statements)

References 12 publications

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“…However ITO film has some drawbacks, such as the high cost of indium and its lower wet etch rate compared with those of ZnO or indium gallium zinc oxide (IGZO), which can lead to damage in the active layer [6]. Therefore alternative TCO films that have similar or better properties are needed, and research has been carried out in this area [6].…”

Section: Introductionmentioning

confidence: 99%

“…In most cases, indium tin oxide (ITO) film has been widely employed as the TCO film due to its good electrical and optical properties, e.g., a low resistivity of $ 2 Â 10 À 4 Ω cm and high transmittance of 485% [5]. However ITO film has some drawbacks, such as the high cost of indium and its lower wet etch rate compared with those of ZnO or indium gallium zinc oxide (IGZO), which can lead to damage in the active layer [6]. Therefore alternative TCO films that have similar or better properties are needed, and research has been carried out in this area [6].…”

Section: Introductionmentioning

confidence: 99%

“…To overcome the various undesirable properties of ITO, aluminium-doped zinc oxide (AZO) has been intensively studied as a candidate for TCO applications, since it exhibits comparable physical properties to those of ITO, such as a low electrical resistivity of $ 10 À 3 Ω cm and a high optical transparency of 480% [6]. Additionally, to obtain high quality AZO with a uniform dopant distribution and good electrical properties, the film fabrication method is very important; atomic layer deposition (ALD) is good technique due to its versatility across various applications.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration

Park

Chung

Park

et al. 2015

Ceramics International

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration

Park

Chung

Park

et al. 2015

Ceramics International

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“…This is particularly interesting because of its low cost, a wide availability of its constituent raw materials and, besides, it is chemically stable in a hydrogen plasma, in comparison with other TCOs used such as indium-tin oxide (ITO) [14,15]. Hence, the use of this material is a reliable and cost effective alternative for Si-based solar cells, thanks to the ease while etching with diluted acid, only to obtain a useful post-deposition texturing [16,17].…”

Section: Introductionmentioning

confidence: 99%

Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

Fernández

Naranjo

2010

Solar Energy Materials and Solar Cells

109

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“…1,2,[19][20][21][22][23][24] For the fabrication of ZnO nanostructures/layers several fabrication methods have been reported, e.g., aqueous solution growth, 25 chemical vapor deposition (CVD), 26 metal-organic chemical vapor deposition (MOCVD), 27 electrochemical deposition, 28 atomic layer deposition (ALD), 29 molecular-beam epitaxy (MBE), 30 pulsed laser deposition (PLD), 31 sputtering 32 and sol-gel. 33,34 Top-down methods can be used for achieving specific ZnO nanostructures/layers by either wet etching 35,36 or dry etching. [37][38][39][40][41][42][43] Furthermore bottom-up techniques have been reported, e.g., hydrothermal nanowire growth, 44 for obtaining hierarchical ZnO nanostructures.…”

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confidence: 99%

Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection

Visser

Prajapati

et al. 2017

ECS J. Solid State Sci. Technol.

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A novel ZnO dry etching approach is introduced using reactive ion beam etching of thick sol-gel ZnO layers for controlled nanodisk/nanocone array fabrication. In this approach the same system can be used for the colloidal lithography mask (silica particles) size reduction by a fluorine-based chemistry and etching of the ZnO nanostructures by a CH 4 /H 2 /Ar chemistry. This resulted in a ZnO:SiO 2 etch selectivity of ∼3.4 and etch rate of ∼56 nm/min. Thick sol-gel ZnO layers, nanodisk arrays and (truncated) nanocone arrays were fabricated and their optical properties analyzed by finite-difference time-domain simulations and spectrally-resolved total/specular reflectivity measurements. The demonstrated broadband omnidirectional anti-reflection, controlled nanostructure period/geometry and low absorption in the visible-NIR spectrum makes these sol-gel ZnO nanostructures very interesting for many optoelectronic applications, including photovoltaics. ZnO is a wide bandgap (∼3.37 eV at room temperature) II-VI semiconductor. Predominantly it crystalizes in the Wurtzite crystal structure and bulk ZnO has a refractive index of n ≈ 1.9-2.2 in the NIR-visible wavelength range. Some of the features of ZnO interesting for photovoltaic applications are its high transparency in the visible-NIR spectrum, a wide bandgap, a large exciton binding energy (60 meV at room temperature), non-centrosymmetric structure, strong room temperature luminescence and biocompatibility. 1,2ZnO has been studied extensively as a candidate for a number of applications, e.g., transparent conductive electrodes, optical waveguides, piezo-electric transducers, acoustic wave devices, conductive gas sensors, solar cell windows and biosensing. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] Here, a sol-gel method has been developed and used for the fabrication of (relatively) thick porous polycrystalline ZnO layers. A similar method has already been reported for thin films by, e.g., Gohdsi et al. 34 and Choudhury et al. 44 Here the method has been extended for obtaining well-defined thick ZnO films (up to ∼2 μm) by using a sequential drop-cast approach in a 'vacuum' environment. The 'building' of these sequential ZnO layers to one thick layer provides a method to tune specific layer thicknesses on the micro/nanoscale. Other approaches for obtaining thick porous ZnO layers have been reported. [45][46][47] The sol-gel method is attractive since it is simple, cheap and straight forward. In addition, this method offers the flexibility to provide ZnO layers on a variety of surfaces. Sol-gel layers, consisting of crystals with c-axis orientation vertical to the surface, can be * Electrochemical Society Member.z E-mail: dvisser@kth.se obtained when the substrate material has a similar Wurtzite crystal structure to ZnO, e.g., GaN, SiC and (0001)-sapphire. For other types of substrates dense sol-gel layers, composed of non-specific direction, can still be obtained. In this work, thick ZnO layers have been fabricated and nanostructured on a Si substrate. These laye...

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A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

Cited by 52 publications

References 12 publications

Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration

Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration

Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection

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