A sub-10mW, noise cancelling, wideband LNA for UWB applications

Arshad, Sana; Ramzan, Rashad; Khurram, Muhammad; Wahab, Q.

doi:10.1016/j.aeue.2014.08.002

Cited by 49 publications

(15 citation statements)

References 5 publications

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“…In order to evaluate and compare the overall performance of the proposed UWB LNA with previous work, a figure-of-merit (FOM) has been evaluated. The figure-of-merit can be obtained as [14,22,23 (17) where |S21|abs is the absolute value of S21, BW is the 3-dB bandwidth measured in GHz, F is noise factor and PmW is the power consumption in mW. Results in this study were obtained with theoretical calculations and simulations with standard model files in 90 nm technology.…”

Section: Simulation Resultsmentioning

confidence: 99%

A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications

Singh

Arya

Kumar

2018

JLPEA

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An ultra-wideband (UWB) low noise amplifier (LNA) for 3.3–13.0 GHz wireless applications using 90 nm CMOS is proposed in this paper. The proposed LNA uses an improved common-gate (CG) topology utilizing feedback body biasing (FBB), which improves noise figure (NF) by a considerable amount. Parallel-series tuned LC network was used between the common-gate first stage and the cascoded common-source (CS) stage to achieve the maximum signal flow from CG to CS stage. Improved CS topology with a series inductor at the drain terminal in the second stage connected and cascoded CS third stage provides high power gain (S21) and bandwidth enhancement throughout the complete UWB. A common-drain buffer stage at the output provides high output reflection coefficient (S22). It achieves an average power gain (S21) of 14.7 ± 0.5 dB with a noise figure (NF) of 3.0–3.7 dB. It has an input reflection coefficient (S11) less than −11.7 dB for 3.3–13.0 GHz frequency and output reflection coefficient (S22) of less than −10.6 dB with a very high reversion isolation (S12) of less than −72.4 dB. It consumes only 5.2 mW from a 0.7 V power supply.

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Section: Simulation Resultsmentioning

confidence: 99%

A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications

Singh

Arya

Kumar

2018

JLPEA

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“…Hence, energy-efficient circuits are the need of the hour. Some of the LNA designs concentrating on low power technology are reported in [31][32][33][34][35][36][37][38][39][40][41]. Two LNAs each operating with 0.4 mW ultra-low-power is reported in [31,32].…”

Section: Introductionmentioning

confidence: 99%

“…In the sub-6 GHz and UWB frequency range, multi-standard applications overlap the bands, thus making the receiver operation prone to harmonic distortion, cross-modulation, and intermodulation distortion. Further improvement in NF and IIP3 performances of the low power LNAs reported in [31][32][33][34][35][36][37][38][39][40][41] will be beneficial for 5G applications in these frequency bands of interest. Some of the high linear LNA topologies reported in the literature can be found in [42][43][44][45][46][47].…”

Section: Introductionmentioning

confidence: 99%

“…From the circuits reported in the literature [31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47], it is clear that low power consumption and other circuit performance parameters such as NF and IIP3 do not go hand-in-hand. Therefore, there is a challenge of processing gigabits of data in low power consumption without compromising linearity.…”

Section: Introductionmentioning

confidence: 99%

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An ultra-low-power low-noise amplifier using cross-coupled positive feedback for 5G IoT applications

2019

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The wireless communication in the next generation is bound to be driven by massive machine-type communication or in other words Internet-of-things (IoT). In the near future, the need for effective communication and higher data processing rates will require IoT devices to support 5G networks. For 5G IoT applications in the ultra-wideband range (3.1-10.6 GHz), the analog receivers must provide both high-performance and energy efficiency simultaneously. This work addresses the demands of 5G IoT analog receivers by proposing an ultra-low-power low noise amplifier (LNA) employing cross-coupled positive shunt feedback. The proposed LNA is designed in UMC 180 nm deep n-well process, and the post-layout characterization is done using Cadence SpectreRF. The proposed design achieves a peak gain of 9.94 dB and a noise figure of 3.2-1.086 dB along the usable bandwidth of 3.2-9.625 GHz while consuming an ultra-low-power of 493 µW from a 1-V power supply. The maximum input-referred third-order intercept point of 8.81 dBm is attained for an input signal at 2.4 GHz and the interferer as close as 2.425 GHz. The LNA consumes a minimal layout area of only 676.2 µm × 350.7 µm. The proposed LNA has the better figure-of-merit while consuming almost 50% less power than the recently reported sub-mW LNA in literature.

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“…Criteria such as power consumption, gain, noise figure, stability, and linearity have been mentioned to evaluate the performance of an LNA. Many topologies like common-source with forward body bias, common-source with resistive feedback, and noise cancelling have been utilized to achieve the aforementioned objectives [1][2][3][4][5][6][7][8][9][10][11]. The minimum voltage supply used was 0.6 volts, culminating in the best power gain (S21) and the best third order interface point (IIP3) [9].…”

Section: Introductionmentioning

confidence: 99%

The Design of an Ultra-Low-Power Ultrawideband (4.5GHz-9.5GHz) Low Noise Amplifier in 0.13μm CMOS Technology

Jobaneh¹

2019

IJET

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An ultra-low power and ultra-wideband LNA is designed and simulated in this paper. The core purpose of the design is the minimum power consumption in 0.13 µm CMOS technology. The proposed LNA is comprised of three differently biased common-source LNAs. Plus, the new and precise formulas for input impedance, output impedance, and the gain of common-source LNA are calculated in this paper. In order to bring down the power consumption of the circuit, the forward body biasing technique is utilised. MATLAB is used to design and solve all equations proposed in this paper. Furthermore, TSMC 0.13 µm CMOS process is used in Advanced Design System (ADS) to scrutinize the LNA. The results achieved are 2.13 dB-2.32 dB,-18.7 dB, 21.94 dB,-9, and 857 µW for Noise Figure (NF), the input matching (S11), gain (S21), IIP3, and power dissipation respectively.

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A sub-10mW, noise cancelling, wideband LNA for UWB applications

Cited by 49 publications

References 5 publications

A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications

A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications

An ultra-low-power low-noise amplifier using cross-coupled positive feedback for 5G IoT applications

The Design of an Ultra-Low-Power Ultrawideband (4.5GHz-9.5GHz) Low Noise Amplifier in 0.13μm CMOS Technology

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