A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's

Lu, Nicky; Cottrell, P.E.; Craig, Winston J.; Dash, S. K.; Critchlow, D.L.; Mohler, R.; Machesney, B.J.; Ning, T.H.; Noble, W.; Parent, R.; Scheuerlein, R.E.; Sprogis, E.; Terman, Lewis M.

doi:10.1109/jssc.1986.1052587

Cited by 52 publications

(6 citation statements)

References 13 publications

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“…In developing this new device, the process modeling utilized was widely available [21]. Plasma or dry silicon etching was required to produce accelerometers, but again, this had already been developed for IC manufacturing [33]- [35]. Other capacitive accelerometers borrowed from conventional CMOS or BICMOS processing in the same way [10].…”

Section: Process Designmentioning

confidence: 99%

Application of MEMS technology in automotive sensors and actuators

1998

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The design of sensors and actuators has increasingly made use of microelectromechanical systems (MEMS) technology. This technology is well suited to producing a class of micromachined sensors and actuators that combines signal processing and communications on a single silicon chip or contained within the same package. This paper contains a discussion of the issues in producing MEMS sensors and actuators from the concept selection stage to the manufacturing platform. Examples of commercial and emerging automotive sensors and actuators are given, which illustrate the various aspects of device development. Future trends in MEMS technology as applied to automotive components are also discussed.

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Section: Process Designmentioning

confidence: 99%

Application of MEMS technology in automotive sensors and actuators

1998

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“…A reduction in single-event susceptibility, as well as improved isolation for scaling, can be achieved with the substrate-plate trench capacitor (SPT) cell [47] and sister structures buried-storage electrode (BSE) [48] and trench-..."-"." --"--".,"--* Field Plate -+ Fig.…”

Section: A Cell Designmentioning

confidence: 99%

“…For example, the stacked capacitor arrangement, discussed previously, places the sensitive charge in isolated polysilicon above the substrate or the substrate trench cell with the storage node inside the trench (the buried storage electrode cell [47], [48]), shown in Fig. 9.…”

Section: B Circuit Designmentioning

confidence: 99%

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Massengill

1996

IEEE Trans. Nucl. Sci.

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A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit informatidn loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed.

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“…This cell structure is referred to as the substrate plate trench (SPT) cell [13]. The capacitor consists of the poly^ilicon storage node electrode which fills the trench, the ONO node dielectric on the trench walls, and the p+ substrate which forms the storage plate.…”

Section: I>-=mentioning

confidence: 99%

The evolution of IBM CMOS DRAM technology

et al. 1995

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The development of DRAM at IBM produced many novel processes and sophisticated analysis methods. Improvements in lithography and innovative process features reduced the cell size by a factor of 18.8 in the time between the 4Mb and 256Mb generations. The original substrate piate trench cell used in the 4Mb chip is still the basis of the 256Mb technology being developed today. This paper describes some of the more important and interesting innovations introduced in IBM CMOS DRAMs. Among them, shallow-trench isolation, 1-line and deep-UV (DUV) lithography, titanium salicidation, tungsten stud contacts, retrograde n-well, and planarized bacl(-end-ofline (BEOL) technology are core elements of current state-of-the-art logic technology described In other papers in this issue. The DRAM specific features described are borderless contacts, the trench capacitor, trench-isolated cell devices, and the "strap." Finally, the methods for study and control of leakage mechanisms which degrade DRAM retention time are described.^Copyright 1995 by International Business Machines Corporation. Copying in printed form for private use is permitted witiiout payment of royalty provided tliat (1) each reproduction is done without alteration and (2) the Journal reference and IBM copyright notice are included on the first page. The title and abstract, but no other portions, of this paper may be copied or distributed royalty free without further permission by computer-based and other information-service systems. Permission to republish any other portion of this paper must be obtained from the Editor.

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A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's

Cited by 52 publications

References 13 publications

Application of MEMS technology in automotive sensors and actuators

Application of MEMS technology in automotive sensors and actuators

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

The evolution of IBM CMOS DRAM technology

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