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AFRL-SN-WP-TR-2001 -1060
SUPPLEMENTARY NOTESThis final report is a Ph.D. dissertation submitted to the University of Cincinnati in partial fulfillment of its requirements for a Doctor of Philosophy degree.
12a. DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution unlimited.
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ABSTRACT (Maximum 200 Words)The development of microelectromechanical Systems (MEMS) switch technology and integration of this technology into radio frequency (RF) electronics has created numerous applications for both commercial and military systems. The incorporation of RF MEMS switches into microwave systems offers unprecedented reductions in insertion loss (on-resistance) with extremely low switching power levels as compared with active devices such as field effect transistors (FETs) and positive-intrinsic-negative (PIN) diodes. Achievement of these performance improvements creates new opportunities for radar systems. The overall objective of this research was the design, fabrication, and characterization of MEMS switches fabricated on gallium arsenide substrates with possible application into microwave systems.