AIBIIICVI2‐Halbleiter mit Chalcopyritstruktur

Kühn, G.; Neumann, H.

doi:10.1002/zfch.19870270602

Cited by 20 publications

(1 citation statement)

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“…However, to fit the temperature dependence of the carrier concentration in the Hall measurements, the presence of a second, deeper donor (D2) is needed with an activation energy of about 100 meV. Similar conclusions have been made in the past [76][77][78]. It seems that this donor is not observed in PL.…”

Section: A Second Shallow Donorsupporting

confidence: 61%

Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model

Spindler

Babbe

Wolter

et al. 2019

Phys. Rev. Materials

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The electronic defects in any semiconductor play a decisive role for the usability of this material in an optoelectronic device. Electronic defects determine the doping level as well as the recombination centers of a solar cell absorber. Cu(In, Ga)Se 2 is used in thin-film solar cells with high and stable efficiencies. The electronic defects in this class of materials have been studied experimentally by photoluminescence, admittance, and photocurrent spectroscopies for many decades now. The literature results are summarized and compared to new results by photoluminescence of deep defects. These observations are related to other experimental methods that investigate the physicochemical structure of defects. To finally assign the electronic defect signatures to actual physicochemical defects, a comparison with theoretical predictions is necessary. In recent years the accuracy of these calculations has greatly improved by the use of hybrid functionals. A comprehensive model of the electronic defects in Cu(In, Ga)Se 2 is proposed based on experiments and theory. The consequences for solar cell efficiency are discussed.

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Section: A Second Shallow Donorsupporting

confidence: 61%