Characterization of Intrinsic Defect Levels in CuInS2

Photoluminescence of Yb3+-doped CuInS2 single crystals prepared by In-flux and chemical vapor transport methods

“…Peaks marked by D are observed at longer wavelength than that of the band gap. Similar peaks are also observed for non-doped CuInS 2 crystals [4,8,9], and are assigned to the defect (donor-acceptor recombination) luminescences [9].…”

Effects of the CuS phase on the growth and properties of CuInS2 thin films

“…Several groups have already reported that sulfur interstitials (S i ) as the acceptor level are located at 170 meV above the valence band. [18][19][20] On the other hand, the defect level of the sulfur atom-occupied copper vacancies (S Cu ) is a donor level, which is located at 280-300 meV below the conduction band. 8,19) The shallower level of the P1 peak at 160 ± 10 meV is determined to be due to the S i defect level, and the deeper level at 290 ± 10 meV is attributed to the S Cu defect level.…”

Characterization of Sb‐doped CuInS 2 crystals

“…One reason for this relatively low efficiency is that the physical properties of CuInS 2 crystals are not accurately known. In perhaps the most useful analyses of defects and bandgaps, Schon and Bucher [3] and Ueng and Hwang [5] have used photoluminescence (PL) spectroscopy to study CuInS 2 .In our previous work [6] CuInS 2 crystals were successfully grown by the hot-press (HP) method at 400 -700 °C for 1 h under pressures of between 10 and 100 MPa. In this work, Sb doping was carried out for controlling p-type conductivity.…”

“…One reason for this relatively low efficiency is that the physical properties of CuInS 2 crystals are not accurately known. In perhaps the most useful analyses of defects and bandgaps, Schon and Bucher [3] and Ueng and Hwang [5] have used photoluminescence (PL) spectroscopy to study CuInS 2 .…”

“…CuInS 2 may be the most promising material for photovoltaic applications due to its bandgap energy of 1.5 eV, which perfectly matches the solar spectrum for energy conversion, and its light absorption coefficient of 3 × 10 4 -10 5 cm −1 [1]. Bulk CuInS 2 single crystals have been grown by the traveling heater method (THM) [2], by chemical vapor transport (CVT) [3] and by other methods. However, large crystals have been difficult to obtain and different phases (CuIn 5 S 8 ) are often formed in THM-and CVTgrown crystals.…”