A surface curvature oscillation model for vapour–liquid–solid growth of periodic one-dimensional nanostructures

Wang, Hui; Wang, Jiantao; Cao, Zexian; Zhang, Wenjun; Lee, Chun‐Sing; Lee, Shuit‐Tong; Zhang, Xiaohong

doi:10.1038/ncomms7412

Cited by 26 publications

(23 citation statements)

References 34 publications

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“…It has been known that uniform-sized SiNWs experience a complete spheroidization at high temperature (>1000 °C; refs 2 , 22 , 23 ). A Plateau-Rayleigh crystal growth has been proposed, only recently, to demonstrate a discrete island-shell growth upon the sidewall of Si or Ge nanowires 3 4 .…”

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confidence: 99%

Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation

Xue

Zhao

et al. 2016

Nat Commun

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The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has been fundamental to explore new phononic and electronic functionalities. We here exploit a nanoscale locomotion of metal droplets to demonstrate a large and readily controllable morphology engineering of crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature <350 °C. This has been accomplished via a tin (Sn) droplet mediated in-plane growth where amorphous Si thin film is consumed as precursor to produce crystalline SiNWs. Thanks to a significant interface-stretching effect, a periodic Plateau-Rayleigh instability oscillation can be stimulated in the liquid Sn droplet, and the temporal oscillation of the Sn droplets is translated faithfully, via the deformable liquid/solid deposition interface, into regular spatial modulation upon the SiNWs. Combined with a unique self-alignment and positioning capability, this new strategy could enable a rational design and single-run fabrication of a wide variety of nanowire-based optoelectronic devices.

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confidence: 99%

Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation

Xue

Zhao

et al. 2016

Nat Commun

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“…The physical, chemical and thermodynamic condition of the molten droplet during this solidification phase will determine the arrangement of the atoms in the growing NW. The criteria for NW growth as expressed by the inequality equation between chemical potentials,

[ 32 ] requires that the Gibbs free energy for a solid becomes less than that of the liquid (

). The difference in the Gibbs free energy provides the driving force for the liquid to solid phase transformation and is expressed as

, where H is enthalpy of fusion and S is entropy in the system.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity

2018

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Although various synthesis and characterization strategies have been employed for the synthesis of crystalline nanowires, there is very little work done on development of low-dimensional amorphous semiconductors. This paper presents a simple strategy to grow amorphous InSb (a-InSb) nanowires (NWs) in a chemical vapor deposition (CVD) system. The NWs were grown on Si substrate coated with indium film and the lack of crystallinity in the as-grown stoichiometric NWs was ascertained by Raman spectroscopy and electron transport measurements. A model proposed to explain the amorphous NW growth mechanism takes into account the fact that NW growth was carried out at the high temperature ramp-up rate of 75 ∘C/min. This high rate is believed to affect the growth kinematics and determine the arrangement of atoms in the growing NW. Raman spectrum of the as-grown sample shows a broad peak around 155 cm−1, indicative of the presence of high density of homopolar Sb-Sb bonds in the amorphous matrix. It was also found that high intensity laser light induces localized crystallization of the NW, most likely due to radiation-stimulated diffusion of defects in a-InSb. The nonlinear trend of the current-voltage characteristics for individually contacted a-InSb NWs was analyzed to prove that the non-linearity is not induced by Schottky contacts. At high bias fields, space charge limited conduction was the proposed electron transport mechanism. Post-growth annealing of the as-grown a-InSb NWs was found to be very effective in causing the NWs to undergo a phase transition from amorphous to crystalline.

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“…For the full details of the model, readers are referred to our original publications. 19,20 Depending on the growth conditions, there are three possible scenarios, as shown in Figure 4b−d.…”

Section: Acs Applied Nano Materialsmentioning

confidence: 99%

Understanding Non-Twinning Zigzag Nanowire Formation for New Nanoscale Devices

Wang

Zhang

et al. 2019

ACS Appl. Nano Mater.

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Periodic or occasional kinks have been widely observed in various semiconductor nanowires grown via the classical vapor−liquid−solid (VLS) approach. These kinks have been explained thus far by twinning-related mechanisms. This work reports zigzag Si nanowires with long periodic lengths (∼100−1000 nm) and diverse turning angles (∼75−165°). It was found that many features of the nanowires cannot be explained by the layer-by-layer growth model typically used for describing nanowire growth in VLS processes but can be explained by periodic oscillation of a liquid−metal droplet at the growing tip of a nanowire. This work reveals the asymmetry VLS growth mechanism for periodic zigzag nanowires. The new mechanism can be applied to control the direction and length in zigzag nanowires which could be used for a new generation of nanoscale devices or applied to avoid the occurrence of kinks where straight nanowires are required.

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A surface curvature oscillation model for vapour–liquid–solid growth of periodic one-dimensional nanostructures

Cited by 26 publications

References 34 publications

Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation

Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation

Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity

Understanding Non-Twinning Zigzag Nanowire Formation for New Nanoscale Devices

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