A surface potential based drain current model for asymmetric double gate MOSFETs

Dutta, Pradipta; Syamal, Binit; Mohankumar, N.; Sarkar, Chandan Kumar

doi:10.1016/j.sse.2010.10.025

Cited by 13 publications

(10 citation statements)

References 30 publications

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“…+t si kTn i e β ψ 0L − V DS − e βψ 00 (18) This expression exactly matches with the current equation proposed by Conde et al [28]. The first part of the equation describes device behaviour in inversion region.…”

Section: Analysis Of Drain Current Modellingsupporting

confidence: 83%

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2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET

Bose

Roy

2019

IET Circuits, Devices & Systems

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The 2D surface potential and mobility models are proposed for symmetric doped/undoped channel double gate FET (DGFET) device. This is then used in drain current equation obtained by combining Pao-Sah's double integral formula with Pierret-Shields' type current model. The surface potential model and mobility model both are analytic and differently solved for both undoped and doped device. Being an explicit and continuous expression, the drain current model is used to describe the behaviour of the device at below and above threshold condition. Simulations are carried out using TCAD Sentaurus bundle of Synopsis tool. The accuracy of the proposed model is analysed and compared with the simulation result for different channel length and channel thickness value of the device.

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Section: Analysis Of Drain Current Modellingsupporting

confidence: 83%

“…Significant research are performed on compact modelling of different multiple gate structures. Among those, symmetric or asymmetric DGFET structure has been extensively studied [14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET

Bose

Roy

2019

IET Circuits, Devices & Systems

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“…To include the different short channel effects, one needs to solve the Poisson's equation using evanescent approach. The 2‐D Poisson's equation can be written as the sum of 1‐D Poisson's equation and 2‐D Laplace equation as follows

ø (x, y) = ø_{1 D} (x) + ø_{2 D} (x, y)

where ø 1 D ( x ) is obtained from . ø 2 D ( x , y ) can be solved by using the generalized boundary conditions as expressed in

- ε_{italicSi} \frac{\partial ø_{2 D} (x, y)}{\partial x} |_{x = 0} = C_{italicoxf} (0 - ø_{2 D} (x = 0, y))

ε_{italicSi} \frac{\partial ø_{2 D} (x, y)}{\partial x} |_{x = t_{italicSi}} = C_{italicoxb} (0 - ø_{2 D} (x = t_{italicSi}, y))

ø_{2 D} (x, 0) = V_{italicbi} - ø_{1 D} (x)

ø_{2 D} (x, L) = V_{italicds} + V_{italicbi} - ø_{1 D} (x)

…”

Section: Model Formulationmentioning

confidence: 99%

“…where ø 1D (x) is obtained from [25]. ø 2D (x,y) can be solved by using the generalized boundary conditions as expressed in 4a, 4b, 4c, 4d…”

Section: Model Formulationmentioning

confidence: 99%

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A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs

Dutta

Syamal

Mohankumar³

et al. 2014

Int. J. Numer. Model.

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In recent times, transistors with heavily doped body have generated much interest because of junctionless channel. In addition, proper threshold voltage regulation requires adjustment of the channel doping, as a result of which most of the compact models become invalid as they consider an intrinsic body. In this paper, a compact surface-potential-based threshold voltage model is developed for short channel asymmetric double-gate metaloxide-semiconductor field-effect transistors with heavily/lightly doped channel. The 2-D surface potential is computed and compared with Technology Computer Aided Design, and a relative error of 2-4 % was obtained. The threshold voltage is solved from 2-D Poisson's equation using 'virtual cathode' method, and a good agreement is observed with the numerical simulations. Also, the model is compared with a reference model and a better result is obtained for heavily doped channel.

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Alternate Structures for Nanoelectronic Applications

Chaudhry

2013

Fundamentals of Nanoscaled Field Effect Transistors

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A surface potential based drain current model for asymmetric double gate MOSFETs

Cited by 13 publications

References 30 publications

2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET

2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET

A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs

Alternate Structures for Nanoelectronic Applications

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