2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET

Abstract

The 2D surface potential and mobility models are proposed for symmetric doped/undoped channel double gate FET (DGFET) device. This is then used in drain current equation obtained by combining Pao-Sah's double integral formula with Pierret-Shields' type current model. The surface potential model and mobility model both are analytic and differently solved for both undoped and doped device. Being an explicit and continuous expression, the drain current model is used to describe the behaviour of the device at below and above threshold condition. Simulations are carried out using TCAD Sentaurus bundle of Synopsis tool. The accuracy of the proposed model is analysed and compared with the simulation result for different channel length and channel thickness value of the device.

Analysis of <i>InN/La₂O₃</i> Twosome for Double-Gate MOSFETs for Radio Frequency Applications

“…After substituting the equations ( 1) and ( 3) in ( 2) and also subsequent reduction equation ( 4) is derived [2]:…”

“…where V(y) may be expressed as V. For the larger thickness of the material, the bending potential is 𝜓𝜓 = 𝜓𝜓 0 , 𝜓𝜓 0 is the bending potential at the center of the material [2,4]. After integrating:…”

“…Taking square root on both sides, the equation is modified, and after integrating on both sides concerning x-direction for the angle approaches to for , 𝜓𝜓 0 can be expressed as [2,5]:…”

“…This type of simulation was extensively used in the latest device manufacturing process to provide greater maintainability, reliability in the design process, and extensibility. The device simulation engineers use this kind of simulation before they enter the fabrication process [2].…”

“…Bose and Roy [2] have proposed the 2D surface potential and mobility models for symmetric doped/undoped channel Double-Gate FET (DGFET) devices. It was used in the drain current equation obtained by combining Pao-Sah's double integral formula with Pierret-Shields' type current model.…”