A switched-current, switched-capacitor temperature sensor in 0.6-μm CMOS

Managing Temperature Effects in Nanoscale Adaptive Systems

“…In the proposed sensor, total energy dissipation over a time window, t, can be represented as (3.9) [79] 0.5 μm 0.014 [80] 0.6 μm 0.017 [81] 0.35 μm 0.024 [82] 0.35 μm 0.029 [86] 0.35 μm 0.029 [87] 2 μm 0.009 [88] 0.7 μm 0.014 [89] 0.7 μm 0.021 [90] 0.6 μm 0.014 [91] 80 nm 1.125…”

Temperature sensors and voltage references implemented in CMOS technology

“…1(b) shows a basic configuration for a CMOS bandgap reference. The generated output amounts to (4) where and is the offset voltage of the amplifier .…”

“…N CMOS technology, both MOS and bipolar transistors can be applied to generate the basic signals for temperature sensors and voltage references [1]- [4]. In case of MOS transistors, the basic signals are derived from the threshold voltage and the mobility.…”

“…The low accuracy of the CMOS references is due to mismatching of components, drift, temperature effects, noise, and mechanical stress. Recently, in [4], [8]- [11], it has been shown that a major part of the CMOS problems can be solved by using auto-zeroing, auto-calibration, signal chopping, and by dynamic element matching. This paper reviews these novel dynamic signal-processing techniques.…”

17 Interface Circuitry and Microsystems

“…[34,35] This technique requires sampled data operation. The low-frequency noise and the offset are, in fact, canceled in two steps, during two nonoverlapping clock phases.…”