A synergistic co-passivation strategy for high-performance perovskite solar cells with large open circuit voltage

Abstract

Perovskite solar cells (PSCs) have shown great application potential due to their excellent performance and simple manufacturing processes. However, the defects in the interior and surface of perovskite film are...

Stepping toward Portable Optoelectronics with SnO2 Quantum Dot-Based Electron Transport Layers

“…Hence, the difference in carrier recombination in the devices with SnO 2 QD- and SnO 2 NP-based ETLs is mainly due to the SRH and surface recombination processes. To quantify the recombination processes in the devices, the values for the density of trap states are calculated using the following relation n trap = 2 ε ε 0 V TFL false( q A 2 false) where q is the elementary charge and V TFL is the trap-filled-limit voltage estimated from SCLC measurements with the electron-only devices. , The estimated value of n trap in the perovskite layer of the device with SnO 2 QD-based ETLs is 1.16 × 10 16 cm 3 , whereas it is 1.89 × 10 16 cm 3 in the device with SnO 2 NP-based ETLs. These results show that the use of SnO 2 NPs to form ETLs results in more trap states in the perovskite layer.…”

“…where q is the elementary charge and V TFL is the trap-filledlimit voltage estimated from SCLC measurements with the electron-only devices. 49,50 The estimated value of n trap in the perovskite layer of the device with SnO 2 QD-based ETLs is 1.16 × 10 16 cm 3 , whereas it is 1.89 × 10 16 cm 3 in the device with SnO 2 NP-based ETLs. These results show that the use of SnO 2 NPs to form ETLs results in more trap states in the perovskite layer.…”

Effects of the Incorporation Amounts of C@NiO in Hole Transport Layer on the Performance of n–i–p Perovskite Solar Cells

“…The defects in the PSCs are filled by the injected charges with the increased bias at both ends of the devices, and the current density increased quickly when the bias voltage reached the trap-filling limit voltage (V TFL ). 46 The value of V TFL can be defined by the tangent intersection between linear and marked increased regions. Figure 5d shows that the V TFL of the (x)C@ NiO-doped devices are 0.16, 0.10, 0.07, 0.08, and 0.15 V. In addition, the N t is calculated by the following equation N t = 2ε 0 ε r V TFL /eL 2 , where ε 0 is the vacuum permittivity, ε r is the dielectric constant of CsFAMA (ε r = 47), e is the electron charge, and L is the thickness of the CsFAMA perovskite layer.…”

“…In addition, the influence of the C@NiO incorporation on trap density ( N t ) and carrier mobility (μ) was investigated by using space charge-limited current (SCLC) measurement. The defects in the PSCs are filled by the injected charges with the increased bias at both ends of the devices, and the current density increased quickly when the bias voltage reached the trap-filling limit voltage ( V TFL ) . The value of V TFL can be defined by the tangent intersection between linear and marked increased regions.…”

Small molecule-incorporated SnO2 layer for efficient perovskite solar cells

“…At present, pre-burying additives into the bottom electron transport layer has been extensively designed. For example, it has been proven that organic salts, polyamine molecules, 28 and quantum dots 29,30 will passivate interfacial defects, 31 regulate the energy level alignment, 32 and induce perovskite crystallization. 33 Zhang et al adopted a cesium formate (CsFo) additive that was pre-buried into SnO 2 , where HCOO À ions passivated defects around the preburied interface.…”