2006 IEEE 4th World Conference on Photovoltaic Energy Conference 2006
DOI: 10.1109/wcpec.2006.279673
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A Systematic Approach to Reduce Process-Induced Shunts in Back-Contacted MC-Si Solar Cells

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Cited by 5 publications
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“…From detailed analysis of the possible shunt paths in the PUM cell it was found that shunt paths around the hole were most critical [8]. By optimizing the emitter laser isolation and the corresponding emitter processing we improved shunt resistances on 225 cm 2 cells from about 7 W to beyond 50 W. With this improved process an efficiency of 16.7% was reached for a 225 cm 2 large mc-Si PUM cell.…”
Section: Results and Discussion High-efficiency Pum Cellsmentioning
confidence: 98%
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“…From detailed analysis of the possible shunt paths in the PUM cell it was found that shunt paths around the hole were most critical [8]. By optimizing the emitter laser isolation and the corresponding emitter processing we improved shunt resistances on 225 cm 2 cells from about 7 W to beyond 50 W. With this improved process an efficiency of 16.7% was reached for a 225 cm 2 large mc-Si PUM cell.…”
Section: Results and Discussion High-efficiency Pum Cellsmentioning
confidence: 98%
“…The integral process was optimized to obtain high efficiencies on a large amount of solar cells, thus with a good process stability. Identifying the shunt paths and adjusting the process to prevent shunting have been key research issues [8].…”
Section: Experimental High-efficiency Pum Cellsmentioning
confidence: 99%