A systematic comparison of various thermal interface materials for applications with surface-mounted (DirectFET^TM) MOSFETs

Experimental Investigation on the Transient Switching Behavior of SiC MOSFETs Using a Stage-Wise Gate Driver

“…This leads to a higher integration level of the converters [4], [5]. A high integration level creates the need for good thermal power flow by using e.g., thermal interface materials [6]. Furthermore, this integration level of power electronic converters can be increased using the emerging high-temperature wide-bandgap (WBG) power semiconductors [7]- [9] as higher switching frequencies can be achieved, which in turn allows a reduction of the filter size.…”