A Systematic Study and Characterization of Advanced Corrosion Resistance Materials and Their Applications for Plasma Etching Processes in Semiconductor Silicon Wafer Fabrication

Oxidation Kinetics of Aluminum Powders in a Gas Fluidized Bed Reactor in the Potential Application of Surge Arresting Materials

“…Aluminum hard anodization has been widely using in semiconductor industry as chamber surface coating. The anodized aluminum through different oxidizing processes at low temperature in acidic solutions has demonstrated excellent performance in corrosion resistance for semiconductor plasma etching equipment from 200 mm silicon wafer fabrication to current 300 mm silicon wafer fabrication worldwide [1]- [28]. The high corrosion resistance, production repeatability, and low cost of anodized aluminum to form a unique oxide layer on aluminum alloys in acidic solutions have been widely used in semiconductor IC industry.…”

“…The high corrosion resistance, production repeatability, and low cost of anodized aluminum to form a unique oxide layer on aluminum alloys in acidic solutions have been widely used in semiconductor IC industry. Shih summarized the chamber materials performance for plasma etching chamber including anodized aluminum in his article [1]. Many technical papers have been published in the study of anodized aluminum and its applications [1]- [28].…”

“…Shih summarized the chamber materials performance for plasma etching chamber including anodized aluminum in his article [1]. Many technical papers have been published in the study of anodized aluminum and its applications [1]- [28]. The formation of oxide layer through logarithmic, parabolic, linear, and combinations of reaction rate in gas phases and the reaction mechanism of aluminum oxide formation described by many authors [29]- [42].…”

Phase composition, structural, and plasma erosion properties of ceramic coating prepared by suspension plasma spraying

“…However, the alumite films are more and more difficult to survive as face the halogen or/and O, Ar contained plasma gas with the increase in the etching power. Plasma gas damages the protection film and generates a larger amount of particle pollution in the etching chamber, resulting in the plasma gas reacting with aluminum substrate …”

“…generates a larger amount of particle pollution in the etching chamber, resulting in the plasma gas reacting with aluminum substrate. 4,5 Recent systematic studies by Qin et al 6 and Kitamura et al [7][8][9] have revealed that sintered Y 3 Al 5 O 12 (YAG) bulk and Y 2 O 3 coating reveal the higher anti-plasma erosion resistance properties as compared with the traditional alumite film. However, it is difficult to process the sintered ceramic bulk into irregular profile structure in order to fit into the etching chamber.…”