A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors

Lim, Keon-Hee; Lee, Jinwon; Huh, Jae-Eun; Park, Jintaek; Lee, Junhee; Lee, Sung‐Eun; Kim, Youn Sang

doi:10.1039/c7tc01779k

Cited by 44 publications

(35 citation statements)

References 29 publications

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“…Figure f,g shows the XRR of the unpurified and purified a‐IZTO thin‐films, respectively, corresponding film densities are 5.29 and 6.18 g cm −3 . The critical angle and oscillations in the curve are related to the film density and smoothness of the surface, respectively …”

Section: Resultsmentioning

confidence: 99%

“…Figure h and shows the full range scan of XPS spectrum for the purified a‐IZTO thin‐film, and the spectrum for the unpurified IZTO film showed in Figure S2a in the Supporting Information. The XPS spectra showing indium (In3d5), zinc (Zn3d5), tin (Sn3d5), and oxygen (O1s) peaks at different binding energies . The transmittances, film densities, and roughness of both unpurified and purified IZTO thin films are summarized in Table S1 in the Supporting Information.…”

Section: Resultsmentioning

confidence: 99%

“…The XPS wide‐ranging scan core level spectra of In3d5, Zn2p3, Sn3d5, and O1s peaks in both unpurified and purified IZTO are shown in Figure S5a–d in the Supporting Information. XPS core level spectra of In3d5, Zn2p3, Sn3d5, and O1s peaks are obtained from the surface of the unpurified and purified a‐IZTO film . The increase of peak intensity for In3d5, Sn3d5, and Zn2p3, and a decrease of O 1s can be seen for the purified film.…”

Section: Resultsmentioning

confidence: 99%

“…The increase of peak intensity for In3d5, Sn3d5, and Zn2p3, and a decrease of O 1s can be seen for the purified film. The increase of peak intensity for In3d5, Sn3d5, and Zn2p3 and decrease of O 1s peak intensity in purified a‐IZTO suggests that the reduction of V o concentration (higher binding energy peak related to V o ) leads to higher the M–O–M bond concentration …”

Section: Resultsmentioning

confidence: 99%

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High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Bukke

Mude

Saha

et al. 2019

Adv Materials Inter

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been widely used as the active semiconductor materials for the oxide TFTs. For example, amorphous indium-zinc-tin oxide (a-IZTO) as an active layer on high-k dielectric material such as aluminum oxide (AlO x ), [42][43][44] zirconium oxide (ZrO x ), [45][46][47][48] hafnium oxide (HfO x ), [49] zirconium-doped aluminum oxide (ZAO), [50] and lanthanum doped zirconium oxide (LaZrO x ) [51] have been used for solution process. The purpose of using a high-κ gate insulator is for the low voltage driven oxide TFTs.The oxide TFT could be annealed at a higher temperature (>500 °C) [52] to improve its performance and stability, but higher annealing temperature prevents the use of the plastic substrate for the flexible display. [53] Also, various process technologies are developed to improve the film quality, for example, Ar/O 2 plasma treatment, [54] O 2 annealing, [55] and UV ozone treatment. [56] Many of the previous reports have focused on the thin-film quality and lowering fabrication process temperature by using the UV treatment [57] or combustion method. [58] Moreover, to address present-day microelectronics challenges, the synthesis of high-quality semiconductor precursor solution is essential for high performance, oxide TFTs at low processing temperatures.In this study, we report the impact of metal oxide precursor purification on the performance of TFTs. Smooth surface morphology and the high-quality interface between a-IZTO and ZrO x are confirmed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopic (XPS) analysis, respectively. The mobility, ON/OFF current ratio, gate voltage swing (SS), and hysteresis of the purified a-IZTO TFTs are significantly improved compared to the TFTs using unpurified precursor solutions. The hysteresis and positive bias-stress stability of the transfer curve for the purified a-IZTO TFTs are improved as a result of the reduced interface charge trapping. Therefore, the purification of the oxide semiconductor is an essential step for high performance, solution processed oxide TFTs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Bukke

Mude

Saha

et al. 2019

Adv Materials Inter

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show abstract

“…However, these methods require high-vacuum conditions and a photolithography patterning process that leads to high costs and cumbersome fabrication procedures [2,5,13,14]. To overcome these problems, alternative film-deposition methods have been proposed [15]. The solution-phase processes (such as spin-coating, spray-coating and ink-jet printing) possess many advantages of scalability, roll-to-roll manufacturing and low-cost fabrication processability.…”

Section: Introductionmentioning

confidence: 99%

Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

et al. 2018

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In this paper, a high-k metal-oxide film (ZrO 2) was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). Furthermore, indium-gallium-zinc oxide thin-film transistors (IGZO-TFTs) with high-k ZrO 2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO 2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO 2 dielectric exhibit a saturation mobility up to 12.7 cm 2 V −1 s −1 , and an on/off ratio as high as 7.6 × 10 5. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s.

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A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

316

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

show abstract

A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors

Abstract: Here we report a systematic study on the effects of precursors and solvents in solution-processed oxide semiconductor thin film transistors.

Cited by 44 publications

References 29 publications

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

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