Solution-processed oxide semiconductors (OSs) have attracted much attention because they can simply, quickly, and cheaply produce transparent channels on flexible substrates. However, despite such advantages, in the fabrication process of OS thin-film transistors (TFTs) using the solution process, it is a fatal problem that there are hardly any ways to simply and effectively control important TFT parameters, including the turn-on voltage ( V) and on/off current ratio. For the practical application of solution-processed OS TFT, approaches to simply and effectively control the parameters are urgently required. Here, we newly propose an atmospheric-pressure plasma (APP) treatment that can simply and effectively control the electrical properties in solution-processed InO TFTs. Through exposure of APP, we successfully realized the changes in important TFT parameters of solution-processed InO TFT, V from -11.4 to -1.9 V and the on/off current ratio from ∼10 to ∼10, which still keep up the high field-effect mobility (>20 cm V s). On the basis of various analyses such as X-ray-based analysis and UV-visible spectroscopy, we identified that the APP treatment can effectively control oxygen vacancy and carrier concentration in solution-processed OS.

Here we report a systematic study on the effects of precursors and solvents in solution-processed oxide semiconductor thin film transistors.

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We proposed solvent-free cross-linked ion gel polymer as a high-κ gate dielectric composed with polyurethane terminated with acrylate functional group and ionic liquids (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) through ultra violet curing (UV-cured IL-PU). Free-standing UV-cured IL-PUs were applied as gate insulator by conformally contacting on the amorphous indium gallium zinc oxide side-gate structure thin film transistor with a simple ex situ method. The device shows a dramatic improvement of electrical performances even under low operating voltage conditions; on/off ratio ∼104, field effect mobility at linear region 47.79 ± 17.65 cm2 V−1 s−1, sub-threshold swing 145.54 ± 16.65 mV decade−1 at VDS = 0.1 V and VGS sweep from −3 to 2 V.