Effective Atmospheric-Pressure Plasma Treatment toward High-Performance Solution-Processed Oxide Thin-Film Transistors

Abstract

Solution-processed oxide semiconductors (OSs) have attracted much attention because they can simply, quickly, and cheaply produce transparent channels on flexible substrates. However, despite such advantages, in the fabrication process of OS thin-film transistors (TFTs) using the solution process, it is a fatal problem that there are hardly any ways to simply and effectively control important TFT parameters, including the turn-on voltage ( V) and on/off current ratio. For the practical application of solution-processed OS TFT, approaches to simply and effectively control the parameters are urgently required. Here, we newly propose an atmospheric-pressure plasma (APP) treatment that can simply and effectively control the electrical properties in solution-processed InO TFTs. Through exposure of APP, we successfully realized the changes in important TFT parameters of solution-processed InO TFT, V from -11.4 to -1.9 V and the on/off current ratio from ∼10 to ∼10, which still keep up the high field-effect mobility (>20 cm V s). On the basis of various analyses such as X-ray-based analysis and UV-visible spectroscopy, we identified that the APP treatment can effectively control oxygen vacancy and carrier concentration in solution-processed OS.

Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors

“…Pure ZnO TFTs fabricated by radio frequency magnetron sputtering show the mobility up to 70 cm 2 V −1 s − 1 6 . ZnO thin films can be deposited by several techniques such as sputtering, chemical vapor deposition, pulsed laser deposition, spin coating, spray pyrolysis, etc [7][8][9][10][11][12][13][14][15] . Among these techniques, spray pyrolysis is a simple and low-cost vacuum-free deposition method to produce reliable and uniform films on large scale 16 .…”

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment

“…And, SS stands for the subthreshold swing. [38] Inset of Figure 1b shows the photograph of 10% Ga-doped IZTO thin-film on the ADRC logo. The band gap of GaO x is higher than that of IZTO because the binding energy of Ga-O (353.5 kJ mol −1 ) is stronger than that of In-O (320.1 kJ mol −1 ) or Zn-O (159 kJ mol −1 ).…”

“…The transfer curves were measured by sweeping gate voltage from −3 to +3 V at the same drain voltage (V ds = 0.1 V). [38,53] Note that there is no change in the SS even after PBS for 1 h, which indicates less trapping sites at the interface. All the devices show the positive transfer shift under positive bias stress, the positive shift is understood by the trapping of electrons at the Ga-doped IZTO/gate insulator interface.…”

“…[38,53] Note that there is no change in the SS even after PBS for 1 h, which indicates less trapping sites at the interface. [38,53] Figure 6e shows that Ar/O 2 plasma treatment reduces the O vacancy, and O-H concentrations. The ΔV th as a function of stress time for Ga-doped IZTO TFTs is shown in Figure S3, Supporting Information.…”

The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

“…However, due to low eldeffect mobility (~10 cm 2 /V•s), which causes excessive power consumption and limits high resolution display, it is di cult to apply to next-generation displays, so more improvements are needed. Although there have been many studies such as various types of doping [14][15][16][17] , material changes [18][19][20][21][22][23][24][25] , and OS lms reinforcement [26][27][28][29] , there have been limitation to a single OS-based TFT due to low eld-effect mobility. To address this issue, dual-stacked OS-based TFTs have been recently considered potential candidates to improve eld-effect mobility, and researches showing a relatively high eld-effect mobility (30~50 cm 2 /V•s) have been reported [30][31][32][33][34][35] .…”