“…Compared to a conventional model of a gate insulator, the equivalent circuit of an SEFET is represented by Figure 2b). It consists of an additional conductance g(dQOX/dt) in series with a battery, and an additional oxide capacitance arising from the change of surface potential, dΨs/dt related to the migration of the ions in the insulator 12 . Both off-state logic in memory as well as asynchronous learning of logic operations of the SEFET were demonstrated.…”