2009
DOI: 10.1109/lmwc.2009.2015508
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A Tail-Injected Divide-by-4 SiGe HBT Injection Locked Frequency Divider

Abstract: This letter presents a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) divide-by-4 injection locked frequency divider (ILFD). The ILFD is based on a single-stage voltage-controlled oscillator with active-inductor, and was fabricated in the 0.35 m SiGe 3P3M BiCMOS technology. The divide-by-4 function is performed by injecting a signal to the base of the tail HBT. Measurement results show that when the supply voltage V DD is 3.1 V and the tuning voltage is tuned from 2.0 to 2.8 V, the divider fr… Show more

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Cited by 28 publications
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