Wide‐locking range divide‐by‐4 injection‐locked frequency divider using injection MOSFET DC‐biased above threshold region

Abstract

A novel wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the paper and was implemented in the TSMC 0.18 μm 1P6M CMOS process. The divide-by-4 ILFD uses two injection transistors in series and DC-biased above threshold voltage and a frequency doubler to enhance the function of linear mixers. At the drain-source bias of 0.9 V and at the incident power of 0 dBm, the locking range of the divide-by-4 is 2.6 GHz; from the incident frequency 12.2 to 14.8 GHz, the percentage is 19.26%. The core power consumption is 10.35 mW. The die area of ILFD is 1.026 × 0.943 mm 2 . Copyright Figure 4. Simulated locking range versus input power with the parameter C1. VDD = 0.9 V, Vb = 0.8 V, and Vinj = 1.7 V. INJECTION-LOCKED FREQUENCY DIVIDER USING ABOVE THRESHOLD MIXER

Broadband reduction of phase noise in a spatially extended tunnel‐diode oscillator through multiple self‐injection locking

“…Injection locking in the second situation was interrupted when V B was varied. Because V B was low, both situations were realized for K 1 [2,9]. Figure 8C,D shows the spatiotemporal voltage maps for K 1 = 3 and 7, respectively.…”

“…Injection locking is an efficient method to reduce phase noise of either oscillators 1 or frequency convertors. 2,3 When the seed signal comes from the original oscillator, rather than from an external source, the method is called self-injection locking. 4,5 In this study, a phase noise reduction scheme using multiple self-injection locking is proposed for a spatially extended oscillator using a transmission line consisting of regularly spaced tunnel diodes, hereinafter referred to as a tunnel-diode (TD) line.…”

“…Injection locking is an efficient method to reduce phase noise of either oscillators 1 or frequency convertors 2,3 . When the seed signal comes from the original oscillator, rather than from an external source, the method is called self‐injection locking 4,5 .…”

Review of Injected Oscillators

“…Due to the small locking range of injected LC oscillators, various techniques have been realized to enhance the locking range. Passive and active structures are explored for improving the injection efficiency such as combining inductors in series or parallel with the injection mixer to enhancing its transconductance, body biasing, transformer feedback, dual-resonance RLC resonators, dual injection for increasing the voltage and current injection paths, tapped resonators, switched resonators, harmonic suppression, and distributed injection to distribute the injection signals; in other words, the injection component is divided to several smaller components; input-power-matching and inductive input-matching network is located to the gate of the NMOS switch to heighten the injection power [63][64][65][66][67][68][69][70][71][72]. Figure 6 discloses a quadrature LC oscillator employed in the injection signal.…”