Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372)
DOI: 10.1109/asic.1998.723056
|View full text |Cite
|
Sign up to set email alerts
|

A temperature compensation subsystem for an IMEMS CMOS pressure sensor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
3
0

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(3 citation statements)
references
References 1 publication
0
3
0
Order By: Relevance
“…FREQUENCY-TO-DIGITAL CONVERSION As shown above the output from the integrated sensor is a frequency modulated signal which needs to be converted into a digital representation. By examining the equation describing an FM-signal it is obvious that the accumulated phase represents the integral of the baseband signal which in this case is the sensed pressure: (8) where , the instantaneous angle, is given by (9) By quantizing the accumulated phase and performing firstorder differentiation on the quantized phase, the system is equivalent to a first-order continuous-time -modulator referred to as the Frequency Delta-Sigma Modulator (FDSM) [2], [3]. The block diagram of the FDSM is illustrated in Fig.…”
mentioning
confidence: 99%
See 2 more Smart Citations
“…FREQUENCY-TO-DIGITAL CONVERSION As shown above the output from the integrated sensor is a frequency modulated signal which needs to be converted into a digital representation. By examining the equation describing an FM-signal it is obvious that the accumulated phase represents the integral of the baseband signal which in this case is the sensed pressure: (8) where , the instantaneous angle, is given by (9) By quantizing the accumulated phase and performing firstorder differentiation on the quantized phase, the system is equivalent to a first-order continuous-time -modulator referred to as the Frequency Delta-Sigma Modulator (FDSM) [2], [3]. The block diagram of the FDSM is illustrated in Fig.…”
mentioning
confidence: 99%
“…By calculating the difference between Equation (4) and (5) we get (6) The value of is typically 138.1 for p-MOS devices compared to -13. 8 for n-MOS devices at room temperature. Placing p-MOS transistors on the diaphragm will therefore exhibit a significantly higher sensitivity to shear stress, than for an n-MOS transistor.…”
mentioning
confidence: 99%
See 1 more Smart Citation