A Temperature-Independent Conducting State in Tetracene Thin Film

Szymański, A.; Larson, D.C.; Labes, M. M.

doi:10.1063/1.1652733

Cited by 59 publications

(13 citation statements)

References 13 publications

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“…Small organic molecules were also incorporated into early MIM structures. In a 600 nm tetracene film, between gold and aluminum electrodes, [20] the resistance decreased abruptly by 5 decades at irreproducible voltages between 4 and 8 V. The same group [21] soon claimed reproducible switching in perylene and tetracene, with either soft metal electrodes (GaIn alloy) or upon doping with electron acceptors. These very early results already reveal the experimental difficulties associated with applying electric fields of up to 100 MV m -1 on thin-film devices that may be several square mm in area: asperities in the bottom electrode, dust particles, pinholes in the organic layer, and irregularities in the deposition of the top electrode can all contribute to the irreproducible behavior, and lead to switching "events" that obscure the intrinsic properties of the homogeneous system.…”

Section: Reviewmentioning

confidence: 96%

Nonvolatile Memory Elements Based on Organic Materials

2007

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Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge–voltage (capacitive) or current–voltage (resistive) response. A critical summary of the proposed charge‐transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on–off ratio, on‐state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.

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Section: Reviewmentioning

confidence: 96%

Nonvolatile Memory Elements Based on Organic Materials

2007

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“…[ 3 ] Nonetheless, on closer inspection of the literature, there were numerous earlier published reports with similar behaving devices but they were not recognized as memristors. [ 4–6 ] The device presented by Hewlett Packard exhibited only two conductivity states and was termed a bistable device. While this device is categorized as a memristor, for a memristor to achieve relevance in synaptic memory emulation, a device would need to be created that can reversibly alter its conductivity through a multitude of states.…”

Section: Introductionmentioning

confidence: 99%

Carbazole Derivatized n‐Alkyl Methacrylate Polymeric Memristors as Flexible Synaptic Substitutes

McFarlane

Bandera

Grant

et al. 2020

Adv Elect Materials

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A memristor is a two‐terminal electronic device whose observed conductance is dependent on the history of the voltage that has been applied across the device. In this effort, poly(11‐(9H‐carbazol‐9‐yl)undecyl methacrylate) (PUMA) is fabricated into a two‐terminal device with Al and ITO electrodes and exhibits a number of signature memristor characteristics such as an irreversible transition from an insulator to a conductor at a specific DC voltage and hysteresis in the AC response. A PUMA‐based device could transition through a multitude of conductance states with varying voltage, allowing the device to exhibit spike‐timing‐dependent‐plasticity, an essential feature in replicating the behavior of biological synapses.

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“…In late sixties, as a first possibility, two conducing states were observed in organic thin films. 4,5) After that, datastorage and switching applications of polymer-based devices were investigated. 6,7) Such devices showed a reproducible non-volatile switching effect, which can be compared with inorganic system-based memory elements.…”

Section: Introductionmentioning

confidence: 99%

Novel Resistance Switching Devices Based on Sub-10 nm Polymer Thin Film

Baek

Ree

Kim

2008

jjap

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Resistive switching memory devices were fabricated using ultrathin (<10 nm) poly(o-anthranilic acid-co-aniline) films. When the devices were biased beyond a critical value with a current compliance of 10 mA, the devices suddenly switched from a high resistive state to a low resistive state (10 mA), with a difference in injection current of more than 4 orders of magnitude. Controlling the injection current level (by controlling the current compliance) allowed the high resistive state of the device to be restored. The devices possess a prolonged retention time of 3 Â 10 3 s after switching. The conduction mechanism in the OFF-state implies that the resistive switching of the device can be explained in terms of filament theory.

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A Temperature-Independent Conducting State in Tetracene Thin Film

Cited by 59 publications

References 13 publications

Nonvolatile Memory Elements Based on Organic Materials

Nonvolatile Memory Elements Based on Organic Materials

Carbazole Derivatized n‐Alkyl Methacrylate Polymeric Memristors as Flexible Synaptic Substitutes

Novel Resistance Switching Devices Based on Sub-10 nm Polymer Thin Film

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