Nonvolatile Memory Elements Based on Organic Materials

Abstract

Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge–voltage (capacitive) or current–voltage (resistive) response. A critical summary of the proposed charge‐transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on–off ratio, on‐state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.

High-performance triazole-containing brush polymers via azide–alkyne click chemistry: a new functional polymer platform for electrical memory devices

“…[16][17][18][19] Thus far, numerous electrical memory polymers composed either of fully π-conjugated backbones [17][18][19][21][22][23][24][25] or of nonconjugated backbones bearing only electron-donor units or both electron-donor and -acceptor units as parts of the backbone and/or side groups have been reported. [18][19][20][26][27][28][29] In particular, the majority of the nonconjugated polymers have been synthesized with carbazole, triphenylamine, fluorine and their derivatives.…”

“…16 As a pseudo-heteroaromatic ring, the triazole ring contains three nitrogen atoms with lone-pair electrons exhibiting high hole affinity, allowing the ring to act as a charge trap site. The exploitation of the charge-trapping characteristic and the ease of forming the triazole ring via azide-alkyne click chemistry can assist in the development of new high-performance electrical memory polymers.…”

Multi-layer stackable polymer memory devices

“…Polymer memory devices show fast switching speed and non-volatile characteristics (Ma et al 2002;Ouyang et al 2004;Scott & Bozano 2007), and are therefore ideal candidates to replace existing memory technologies. However, in order for polymer memory to achieve commercial success, there are a few hurdles that need to be overcome.…”

Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics

“…[1][2][3][4][5] Achieving flexible plastic memory modules based on OMDs is of critical importance for the fabrication of real flexible electronic systems because inorganic semiconductors have a fundamental limitation in terms of flexibility owing to their rigid crystal structures. [6][7][8] In addition, the performance of OMDs can be tailored by applying various types of organic semiconductors, which are manufactured via organic synthesis and modification/blend processes.…”