Diblock copolymers consisting of electron-donating poly[2,7-(9,9-dihexylfluorene)] (PF) rods and electron-withdrawing poly (pendent isoindigo) (Piso) coils were designed and synthesized through a click reaction. The electronic properties and interchain organization of the copolymers could be tuned by varying the PF/Piso ratio (PF 14 -b-Piso n (n = 10, 20, 60 and 100)). The highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels of the studied polymers were progressively reduced as the length of Piso increased, affecting the charge trapping and intramolecular charge transfer environment between PF and Piso domains. Thermally treated PF 14 -b-Piso n thin films exhibited a clear nanofibrillar structure, and the d-spacing was enhanced systematically as the Piso chain length increased. Resistive memory characteristics were explored with a sandwich indium tin oxide/PF 14 -b-Piso n s/Al device configuration. The enhanced conjugated PF conducting channels led to stable resistance switching behavior, exhibiting volatile SRAM (static random access memory) (PF 14 -b-Piso 10 ) and nonvolatile WORM (write-once-read-many-times) (PF 14 -b-Piso 20 , PF 14 -b-Piso 60 , PF 14 -b-Piso 100 ) characteristics with a large ON/OFF ratio (10 6 ) and a stable retention time (10 4 s). A more appealing feature is that such memory cells were integrated on a soft poly(dimethylsiloxane) substrate, allowing for the development of a stretchable data storage device. Reliable and reproducible electrical characteristics, including SRAM-and WORM-type memories, could be explored as the device was stretched under an applied tensile strain ranging from 0 to 50%. The studied donor-acceptor copolymers indeed showed great potential for stretchable electronic applications with controllable digital information storage characteristics. NPG Asia Materials (2016) 8, e298; doi:10.1038/am.2016.112; published online 26 August 2016 INTRODUCTION Polymer-based electrical bistable memory devices have been extensively studied owing to their advantages of structural flexibility, low-cost, printability and three-dimensional stacking. 1-3 Such memories can be switched between high and low resistance states (that is, OFF and ON states) by applying an external electric field. [4][5][6][7][8][9][10][11][12] Electrical memory characteristics can generally be divided into two categories, namely nonvolatile (for example, WORM (writeonce-read-many-times) and flash) and volatile memory (for example, dynamic random access memory and SRAM (static random access memory)), which show different tendencies for the stored charges to dispel. The volatility of these digital information storage devices can be controlled by (1) the charge transfer or charge trapping ability of the active materials and (2) the morphological packing structures in the memory layers. Conjugated block copolymers can effectively manipulate charge storage volatility because of their unique self-organization properties, on the basis of the chemical structures of